DTA143ECAHZGT116 Discrete Semiconductor Products |
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Allicdata Part #: | DTA143ECAHZGT116TR-ND |
Manufacturer Part#: |
DTA143ECAHZGT116 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PNP -100MA -50V DIGITAL TRANSIST |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA143ECAHZGT116 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.01855 |
Current - Collector (Ic) (Max): | 100mA |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 350mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A DTA143ECA pre-biased single die transistor is a type of bipolar junction transistor (BJT). It is a three-terminal, through hole (TH) device, meaning that it provides a connection between the collector and base electrodes. The collector is a negative bias point which is connected to the power supply, while the base is a positive bias point connected to the signal source. The DTA143ECA is suitable for a range of medium and large power applications, such as heat sinked resistive load drivers, DPAK output drivers and automated test circuitry. It is designed for use in applications where a high current gain and good saturation performance are essential. The transistor has a 4.5V minimum collector to emitter voltage, a maximum collector current of 3A, a power dissipation of 625mW, a minimum storage temperature of -55 degrees Celsius and a maximum storage temperature of 150 degrees Celsius.The working principle of the DTA143ECA is based on a typical BJT. When a voltage is applied between the base and emitter, the current begins to flow through the emitter-base junction, which causes electrons to be “injected” into the base region. These electrons create an electric field that opposes current flow between the collector and emitter, thus providing the current gain of the transistor. The collector current is then determined by the base current, thus providing the transistor with its current gain. The current gain of the DTA143ECA can be adjusted by varying the magnitude of the base current and the applied voltage between the collector and emitter. This ensures that the device can be tailored to each individual application. The collector-emitter saturation voltage is also adjustable depending on the base current and the applied voltage, thus allowing for more efficient operation of the device.In addition to its ability to adjust the current gain and collector-emitter saturation voltage, the DTA143ECA also has a low leakage current and thermal dissipation. The transistor’s high power rating allows for large load currents to be driven with low losses, making it suitable for various types of power electronic applications. The DTA143ECA is also very reliable and has a long operating life. It is manufactured with 5 mil pitch to ensure compatibility with automated test circuitry, and it also features a high-temperature, hermetically sealed package which provides an extra layer of protection.Overall, the DTA143ECA single die transistor is an ideal choice for applications that require high current gain and saturation performance. Its pre-biased construction makes it easy to integrate into existing systems, while its adjustable current gain and collector-emitter saturation voltage enable it to easily meet the requirements of various applications.
The specific data is subject to PDF, and the above content is for reference
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