Allicdata Part #: | DTA143TUAT106TR-ND |
Manufacturer Part#: |
DTA143TUAT106 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA143TUAT106 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.02193 |
6000 +: | $ 0.01978 |
15000 +: | $ 0.01720 |
30000 +: | $ 0.01548 |
75000 +: | $ 0.01376 |
150000 +: | $ 0.01147 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DTA143 |
Supplier Device Package: | UMT3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DTA143TUAT106 is a single, pre-biased transistor in the Bipolar Junction Transistor (BJT) family that provides unique electrical characteristics, making it suitable for a variety of applications. This article will discuss the application field and working principle of this particular transistor.
Application Field
The DTA143TUAT106 is a versatile high-performance transistor that can be used in a variety of different applications. It is often used in power management applications in which its high-power handling capabilities are beneficial. It is also very useful when used in signal and switching applications, owing to its reliable turn-on time and low power dissipation. It is also frequently used in high frequency circuits because of its good signal-to-noise ratio. This makes it a suitable choice for a number of applications such as amplifiers, modulators, converters, and other circuitry requiring a high performance, reliable BJT.
Working Principle
The DTA143TUAT106 operates on the principle of a single BJT. This type of device is based on the current flow between two doped regions, commonly referred to as the base and the collector. It is composed of three doped layers - an n-type base on the bottom, a middle layer of p-type material, and a top layer of n-type material. When a voltage is applied to the base-collector junction, electrons flow from the n-type base to the p-type material and then to the n-type collector, causing current to flow. This current flow can then be used in a variety of applications.
The key characteristic of the DTA143TUAT106 is its pre-biased operation. This type of transistor is biased before operation which ensures optimum performance when switching from on to off. This is due to the intrinsic feedback loop created by the pre-biased operation which helps to keep the current flow constant. This helps reduce the power dissipation of the device and allows for a more reliable and efficient operation.
The DTA143TUAT106 has a wide range of applications due to its unique electrical characteristics. It is a pre-biased BJT that provides excellent power handling capabilities and a reliable turn-on time. Its pre-biased operation ensures optimum performance when switching from on to off, while its high signal-to-noise ratio makes it a great choice for high frequency circuits. This makes the DTA143TUAT106 an ideal choice for applications such as amplifiers, modulators, and converters.
The specific data is subject to PDF, and the above content is for reference
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