DTA143TUAT106 Allicdata Electronics
Allicdata Part #:

DTA143TUAT106TR-ND

Manufacturer Part#:

DTA143TUAT106

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 200MW UMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143TUAT106 datasheetDTA143TUAT106 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.02193
6000 +: $ 0.01978
15000 +: $ 0.01720
30000 +: $ 0.01548
75000 +: $ 0.01376
150000 +: $ 0.01147
Stock 1000Can Ship Immediately
$ 0.02
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: DTA143
Supplier Device Package: UMT3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DTA143TUAT106 is a single, pre-biased transistor in the Bipolar Junction Transistor (BJT) family that provides unique electrical characteristics, making it suitable for a variety of applications. This article will discuss the application field and working principle of this particular transistor.

Application Field

The DTA143TUAT106 is a versatile high-performance transistor that can be used in a variety of different applications. It is often used in power management applications in which its high-power handling capabilities are beneficial. It is also very useful when used in signal and switching applications, owing to its reliable turn-on time and low power dissipation. It is also frequently used in high frequency circuits because of its good signal-to-noise ratio. This makes it a suitable choice for a number of applications such as amplifiers, modulators, converters, and other circuitry requiring a high performance, reliable BJT.

Working Principle

The DTA143TUAT106 operates on the principle of a single BJT. This type of device is based on the current flow between two doped regions, commonly referred to as the base and the collector. It is composed of three doped layers - an n-type base on the bottom, a middle layer of p-type material, and a top layer of n-type material. When a voltage is applied to the base-collector junction, electrons flow from the n-type base to the p-type material and then to the n-type collector, causing current to flow. This current flow can then be used in a variety of applications.

The key characteristic of the DTA143TUAT106 is its pre-biased operation. This type of transistor is biased before operation which ensures optimum performance when switching from on to off. This is due to the intrinsic feedback loop created by the pre-biased operation which helps to keep the current flow constant. This helps reduce the power dissipation of the device and allows for a more reliable and efficient operation.

The DTA143TUAT106 has a wide range of applications due to its unique electrical characteristics. It is a pre-biased BJT that provides excellent power handling capabilities and a reliable turn-on time. Its pre-biased operation ensures optimum performance when switching from on to off, while its high signal-to-noise ratio makes it a great choice for high frequency circuits. This makes the DTA143TUAT106 an ideal choice for applications such as amplifiers, modulators, and converters.

The specific data is subject to PDF, and the above content is for reference

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