
DTA143XEFRATL Discrete Semiconductor Products |
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Allicdata Part #: | DTA143XEFRATLTR-ND |
Manufacturer Part#: |
DTA143XEFRATL |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PNP DIGITAL TRANSISTOR (WITH BUI |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.02739 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | EMT3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
DTA143XEFRATL is an advanced type of single-bipolar junction transistors (BJT), pre-biased for use in circuits which necessitate higher breakdown voltage and a wide range of current gain. It is constructed as a very thin nPN silicon epitaxial layer on a ceramic substrate with a thin layer of aluminum oxide passivation. The device is designed to provide superior thermal stability, wide-range current gain, small size, and reliable operation in a wide range of environments.
The working principle of the transistor is based on the use of electrons to interfere with a current passing through a semiconductor material. The amount of current passing through the material is related to the voltage applied to the transistor. In a BJT, when a voltage is applied to the base, electrons are attracted and will flow out of the base and are injected into the collector. This creates an amplified current gain that can be used to power a circuit.
This type of bipolar junction transistor can be used in applications ranging from small audio amplifiers to high-voltage power switches and microcontrollers. Its medium-power switching capability, low noise level, high voltage and current handling capacity, and small size make it suitable for use in a wide range of applications. The device is very suitable for use in industrial and automotive applications, such as relays and switches.
This transistor also features excellent dielectric strength and insulation. The device is able to withstand peak voltages up to 500V. Its operating temperature range is wide, from -55°C to +175°C. The device includes a wide variety of protection and safety features including over-voltage, over-temperature, and reverse-current protection.
In conclusion, the DTA143XEFRATL is an ideal choice for use in low- to high-voltage bipolar junction transistor-based circuits. It offers superior thermal stability, wide-range current gain, small size, reliable operation, and excellent protection and safety features. Its versatility and performance make it a great choice for both commercial and industrial applications.
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