DTA143ZE-TP Allicdata Electronics

DTA143ZE-TP Discrete Semiconductor Products

Allicdata Part #:

DTA143ZE-TPMSTR-ND

Manufacturer Part#:

DTA143ZE-TP

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS PREBIAS PNP 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143ZE-TP datasheetDTA143ZE-TP Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.02739
6000 +: $ 0.02381
15000 +: $ 0.02024
30000 +: $ 0.01905
75000 +: $ 0.01786
150000 +: $ 0.01588
Stock 3000Can Ship Immediately
$ 0.03
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: DTA143Z
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DTA143ZE-TP is a single, pre-biased bipolar junction transistor (BJT) specifically designed to be used in an array of applications. This device is a three-terminal semiconductor, made of two p-type and one n-type material, bound together at the same juncture forming what is known as an excitation base between the collector and the emitter. In essence, the DTA143ZE-TP acts like a variable electronic switch.

The DTA143ZE-TP, when applied with a tiny current, functions as an open switch, in which electrons can flow freely from the collector to the emitter. With an increased bias voltage applied to the base, the transistor will allow more current to flow up to its maximum capacity, thus allowing the collector total current to be varied. The bias voltage must be adjusted so that the correct amount of current flows through the transistor. This is known as the current gain of the BJT, which is symbolized by the letter \'h\'.

When it comes to its application field, the DTA143ZE-TP can be found in many electronic circuits, such as power supplies, amplifiers and linear circuits. In this manner, it can be used as a simple switch, where a predetermined threshold current can cause a change of state. This feature makes it a good candidate for chopper circuit designs where precise control and fast dynamic response times are desired.

It is also extremely useful in amplifier circuits, as it can be operated in both the linear and cutoff regimes. In linear operation, the current gains of the transistor increases with increasing base current, while in cutoff operation IGBTs can be utilized to turn off the transistor allowing the amplified current to be cut off and thus allowing precise monitoring and control of the output. Furthermore, it can be used to generate audio signals as it is capable of producing a high frequency oscillations.

The load capacity of this particular BJT is also noteworthy as it can handle up to 0.5 amps of current. This makes it useful for designing circuits operating in a wide range of current levels and varying frequencies. Moreover, the DTA143ZE-TP\'s triband switching capability makes it perfectly suitable for wireless communication applications and automotive systems.

Its operation involves a base current which carries charge carriers to gain the ability to control the continuous flow of electron from the collector to the emitter. Generally, the DTA143ZE-TP bipolar junction transistor is a versatile device, and it can also be used in countless electronic applications.

The specific data is subject to PDF, and the above content is for reference

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