Allicdata Part #: | DTA143ZEBTLTR-ND |
Manufacturer Part#: |
DTA143ZEBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 150MW EMT3F |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA143ZEBTL Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | DTA143 |
Supplier Device Package: | EMT3F (SOT-416FL) |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DTA143ZEBTL is a pre-biased, single bipolar junction transistor (BJT) that belongs to a series of Transistors manufactured by Diodes Inc. This device is designed with an integrated Schottky diode for ESD protection and a monolithic resistive network that is capable of producing a controlled bias between the base and the emitter. The DTA143ZEBTL is commonly used when high current conduction and efficient signal amplification are required.
The DTA143ZEBTL is constructed using a three-terminal silicon device, the base, collector, and emitter. A single BJT is designed to act as an amplifier which is capable of both current and voltage control. Since it is an active device, the DTA143ZEBTL is able to produce a current that is proportional to the base current but with a amplified voltage gain. This is accomplished by a current flowing from the emitter to the collector.
The pre-bias network of this transistor can provide a stable base-emitter voltage, or VBE, which is needed to reduce the effect of emitter resistance. This is done by biasing the collector to a certain level, reducing the base resistance which results in increased current flow. This allows the transistor to accurately control both current and voltage. With the integratedSchottky diode, the transistor is able to withstand ESD without damage.
The DTA143ZEBTL is commonly used in audio and power applications due to its high gain and high current gain (hFE). In audio applications, it can be used as an Amplifier to increase the amplitude of an incoming signal. This can be useful in amplifying speech or sound for speaker systems. In power applications, this transistor can be used in voltage switching, oscillator circuits, and DC-DC converters. Since this transistor is capable of producing high currents with relatively low power dissipation, it can also be used in high-power devices such as motors, air conditioners, and microwaves.
In summary, the DTA143ZEBTL is a single bipolar junction transistor (BJT) that provides higher current and voltage control compared to a standard BJT. The pre-biased design helps to reduce emitter resistance and the integrated Schottky diode provides ESD protection. This device is commonly used in both audio and power applications such as Amplifiers, voltage switching circuits, DC-DC converters, and motors.
The specific data is subject to PDF, and the above content is for reference
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