DTA143ZU3T106 Allicdata Electronics
Allicdata Part #:

DTA143ZU3T106TR-ND

Manufacturer Part#:

DTA143ZU3T106

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP -100MA -50V DIGITAL TRANSIST
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143ZU3T106 datasheetDTA143ZU3T106 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.02193
6000 +: $ 0.01978
15000 +: $ 0.01720
30000 +: $ 0.01548
75000 +: $ 0.01376
150000 +: $ 0.01147
Stock 3000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
Description

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The DTA143ZU3T106 Pre-Biased Single Transistor, commonly known as a BJT, is one of the latest generation of transistors and is used in a variety of applications. This article aims to discuss the application field and working principle of the device.

The DTA143ZU3T106 is ideal for use in logic and power circuit applications. It has a wide range of operating temperature and can operate in temperatures ranging from -40°C to +125°C. Additionally, its package is specifically designed to minimize thermal stress, ensuring the highest level of reliability.

The DTA143ZU3T106 has a pre-biased structure, meaning that it can be used for obtaining higher gain at lower voltages than symmetrical pair transistors. This makes it suitable for applications such as voltage level shifting and buffer amplifiers. The device has a high gain, low noise and wide range of temperature operation, so it is suitable for many different signals processing applications.

The DTA143ZU3T106 is also well-suited for power circuit designs. It is capable of handling high currents with low power dissipation and minimum losses, making it suitable for use in power applications such as amplifiers, DC-DC converters and inverters.

The working principle behind the DTA143ZU3T106 is relatively simple. It is a three-terminal device which consists of two NPN transistors and a single PNP transistor. The transistors are connected in a Darlington configuration, which allows for high current gain and low noise levels. The device is also pre-biased, which means that the collector current is already established before the device is applied to its application. This allows for a much faster response time and better overall performance.

The DTA143ZU3T106 is a versatile single transistor, ideal for use in a variety of applications. Its pre-biased structure ensures that it can produce higher gains and better performance at lower voltages than a symmetrical pair transistor. It is suitable for use in power and logic applications, as well as in wide range of signal processing applications. Its simple working principle and wide operating temperature ensure that it is reliable and can provide the best performance for its applications.

The specific data is subject to PDF, and the above content is for reference

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