Allicdata Part #: | DTA144ECAHZGT116TR-ND |
Manufacturer Part#: |
DTA144ECAHZGT116 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PNP -100MA -50V DIGITAL TRANSIST |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA144ECAHZGT116 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02024 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 350mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
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The DTA144ECAHZGT116 is a single pre-biased, bipolar junction transistor (BJT) that allows for faster switching speeds, higher current gain and better operating performance than all other BJT devices. This device is ideal for applications in power switching and high-speed logic designs. This article will discuss the application field and working principle of the DTA144ECAHZGT116.
The DTA144ECAHZGT116 is a NPN transistor packaged in a Standard Small-Outline (SO) package. This device is built on an epitaxial silicon substrate and is designed for general purpose and power switching applications. It is suitable for use in applications where high switching voltages or high peak currents are required such as voltage regulators, power amplifiers, power switching circuits, and logic level switching circuits. The DTA144ECAHZGT116 can be used up to a 65V maximum collector-emitter voltage rating. It also has a maximum collector dissipation of 8W.
The DTA144ECAHZGT116 has three pins; collector, emitter and base. The collector pin is the positive terminal and is used to supply the current to the device. The emitter pin is the negative terminal and is used to return the current back to the source. The base pin is used to control the current flow between the collector and emitter. The bipolar transistor works by allowing current to flow between the collector and emitter through the base once a small base current is applied. The amount of current that can flow between the collector and emitter is determined by the amount of base current applied. As the base current is increased, more current is allowed to flow between the collector and emitter, thus increasing the current gain of the device.
In order to provide greater reliability and performance, the DTA144ECAHZGT116 is pre-biased. This means that the device is already partially turned on with a pre-determined base current. This makes the device more efficient and reduces the amount of power that needs to be supplied to the base current to switch on the device. Pre-biasing also allows for faster switching times as the base current does not need to be supplied or switched on before the collector and emitter currents are switched on.
The DTA144ECAHZGT116 can also be used in applications such as class AB audio amplifiers, switching power supplies, and linear power amplifiers. It is also suitable for use in applications where high switching frequencies are required. These applications include voltage regulators, switching regulators, motor drive controls, and class D and class H audio amplifiers. The pre-biasing of the device also allows for faster switching times in high frequency applications.
The DTA144ECAHZGT116 is a single pre-biased bipolar junction transistor that is ideal for use in a wide range of applications. It is designed for applications that require fast switching speeds, high current gain and reliability. It can also be used in applications where high switching frequencies are required. This device is pre-biased to reduce the amount of power needed to switch it on, and it provides greater efficiency, reliability and performance than other BJT devices.
The specific data is subject to PDF, and the above content is for reference
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