Allicdata Part #: | DTA144ESATP-ND |
Manufacturer Part#: |
DTA144ESATP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW SPT |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA144ESATP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Base Part Number: | DTA144 |
Supplier Device Package: | SPT |
Package / Case: | SC-72 Formed Leads |
Mounting Type: | Through Hole |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 30mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Box (TB) |
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The DTA144ESATP is a single, pre-biased transistor. It is a common type of bipolar junction transistor (BJT), a type of semiconductor device found in both digital and analog circuits. A common application of this device is as an amplifier or a switch in circuits that require high input resistance. The device also finds extensive uses in Analog to Digital conversions, due to its high accuracy, low power consumption and low signal distortion.
Structure and Basic Working
The device has three main parts consisting of emitter (E), base (B) and collector (C), and works on the principle that at specific voltages, the current flowing between two points is determined by the structure of the device. In a BJT, charge carriers— electrons in the emitter, holes in the collector — are injected into the base region and subsequently collected at the other end. The device is pre-biased, meaning part of the current is already flowing through the circuit, thus eliminating the need for external bias sources and providing improved circuit stability.
Characteristics
The DTA144ESATP has a maximum collector to emitter breakdown voltage (Vce) of 150V, a maximum collector current (Ic) of 140mA and a minimum current gain (hFE) of 350. In terms of noise, its noise figure (NF) is 2.3 dB typically and a maximum of 3.3 dB. It also has a collector-emitter capacitance (Cec) of 0.10pF and an emitter-base capacitance (Ceb) of 0.02pF. Additionally, the device offers a low saturation voltage of 0.2V and a collector-emitter voltage of only 1V.
Applications
The DTA144ESATP has a variety of applications due to its high performance characteristics. As an amplifier and/or switch, the device is used in various level-detection circuits, signal-termination circuits and amplifiers for high-speed signals. Its low power consumption makes it suitable for low-power and low-voltage applications. Additionally, it can be used in low-level analog circuits such as amplifiers, comparators and filters, as well as for high speed signal processing circuits such as analog-to-digital converters. The DTA144ESATP also finds use in audio applications and line-latching circuits.
Conclusion
In summary, the DTA144ESATP is a single, pre-biased transistor which provides improved circuit stability and low power consumption when compared to other BJT devices. Its high input resistance, low noise figure and low saturation voltage make it suitable for various analog and digital applications such as amplifiers, signal-termination circuits, level detection circuits and analog-to-digital converters. Due to its excellent performance characteristics, it is increasingly used in a wide range of modern circuit designs.
The specific data is subject to PDF, and the above content is for reference
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