| Allicdata Part #: | DTA144TT1OS-ND |
| Manufacturer Part#: |
DTA144TT1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS PNP 230MW SC59 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | DTA144TT1 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 230mW |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SC-59 |
| Base Part Number: | DTA144 |
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DTA144TT1 is a single, pre-biased, bipolar transistor that has various applications, including RF/microwave processing, power management, and signal processing. It is used in systems such as satellite receivers, digital clocks, and similar electronic devices. The DTA144TT1 is designed for operation over the full voltage range of 40 V to 180 V.
The DTA144TT1 employs a PN junction which produces a forward-bias current flow from the collector to the base. This current flow controls the amount of current that can flow from the collector to the emitter as determined by the power dissipation of the PN junction. The transistor is pre-biased in order to provide greater control over the collector-to-emitter current flow. The pre-bias enables the collector-to-emitter current to be stable and at a lower than maximum Uce level for faster switching times.
The DTA144TT1 is a switching type transistor that provides high-frequency performance. The device is relatively small and is widely used in transceiver applications. It has a high speed of switching, up to 200mhz. The switch time at 10 volts is approximately 75 nanoseconds; at collector current of 500mA, the switch time is approximately 225 nanoseconds.
The DTA144TT1 has been designed to meet extreme environmental conditions, such as high temperature, humidity, and temperature cycling. The device also features extended voltage operation, radiation hardening and low duty cycle operation. The extreme environmental conditions are essential for applications such as satellite radio and digital TV.
The working principle of the device is such that the base to collector voltage is established by the PN junction of the device. This voltage is known as the on-state voltage, and it is the voltage at which the collector current is maximized. The base current is then determined by the base to emitter voltage and the base resistance. The collector to emitter current is determined by the first two voltages and by a current gain that is determined by the ratio of base to collector current.
The DTA144TT1 is an excellent choice for applications that require high speed and reliability. Its robust design and reliable operation make it ideal for extreme environments. Additionally, its low-cost production, higher reliability and reduced power consumption, compared to other solutions, make it very attractive for customers and system designers. The device has found many applications in radio frequency and microwave processing, power management and signal processing.
The specific data is subject to PDF, and the above content is for reference
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DTA144TT1 Datasheet/PDF