| Allicdata Part #: | DTA144WET1GOS-ND |
| Manufacturer Part#: |
DTA144WET1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS PNP 200MW SC75 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | DTA144WET1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 200mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SC-75, SOT-416 |
| Base Part Number: | DTA144 |
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The DTA144WET1G transistor is an NPN Pre-Biased Bipolar Junction Transistor (BJT). It is most commonly used as an audio amplifier, switching device, and security control device, among other applications. In this article, we will discuss the applications and working principles of the DTA144WET1G transistor.
The DTA144WET1G transistor is classified as a Pre-Biased Single Bipolar Junction Transistor (BJT). It has an NPN construction, a maximum power rating of 30 watts, and a maximum collector current of 8.7 A. The DTA144WET1G is designed for use in applications where high power and current are required, such as audio amplifiers, motor controls, and alarm systems. This type of transistor is also suitable for use in power switching, voltage regulation, and load switching devices.
The working principle of the DTA144WET1G is based on the classic bipolar junction transistor (BJT) design. In this type of configuration, two P-type semiconductors are sandwiched between two N-type semiconductors. These P and N type semiconductors are then connected to the input voltage and ground, respectively. When the input voltage is applied to the base terminal, a potential difference is created between the base and collector terminals. This potential difference, known as the base-emitter voltage, forces electrons to flow from the N-type material to the P-type material and generates a current in the collector circuit. This current is then amplified and can be used to control various loads.
One of the main advantages of the DTA144WET1G is that it is already pre-biased. Pre-biased transistors require less power to operate, can handle higher currents, and are better suited to high-frequency applications. This makes them highly suitable for use in applications such as audio amplifiers and other high-performance systems.
The DTA144WET1G is also a suitable choice for motor control applications, as it can handle large current loads while providing a high level of reliability. Its built-in protection devices such as slew rate control, overcurrent protection, and high-speed shutdown can help protect the device from damage. It also features a low-profile footprint which makes it easier to integrate into a system.
The DTA144WET1G is a reliable and effective choice for a wide range of applications. It is suitable for use in audio amplifiers, switching devices, and security control devices, as well as motor control, voltage regulation, and load switching applications. Thanks to its pre-bias and other protection features, the DTA144WET1G offers high performance and reliability for even the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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DTA144WET1G Datasheet/PDF