Allicdata Part #: | DTA144WM3T5G-ND |
Manufacturer Part#: |
DTA144WM3T5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 260MW SOT723 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA144WM3T5G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 260mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SOT-723 |
Base Part Number: | DTA144 |
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A DTA144WM3T5G is a single, pre-biased bipolar junction transistor (BJT). It is a general-purpose transistor made using a silicon epitaxial planar process to provide a cost-effective solution to high-speed switching applications demanding enhanced performance. The DTA144WM3T5G features a collector-emitter voltage of 60V, a continuous collector current of 3.5A, and a power dissipation of 20W. It has a high current gain of at least 100, making it an ideal choice for many high-speed applications. The DTA144WM3T5G is a PNP type BJT, meaning it is connected to the positive side of the source and the collector is connected to the negative side. This arrangement allows the current to flow through the transistor in the same direction, giving it the ability to operate at significantly higher speeds than other BJT types.The DTA144WM3T5G has a wide range of applications, such as switch-mode power supplies and power distribution systems, audio amplification, motor control, and high-voltage inverters. It is particularly suitable for use in switching applications where high-speed operation is critical, due to its high current gain and low saturation voltage.The working principle of a BJT is based on the movement of free electrons from the n-type material to the p-type material, and vice versa. When a voltage is applied to the base-emitter junction, the electrons move from the n-type material and holes move from the p-type material. This results in a current flow from the emitter to the collector and the transistor is turned on. When the current flow is stopped, the transistor turns off. The DTA144WM3T5G provides many advantages for high-speed applications, such as low saturation voltage, low gate-drain capacitance, and high reliability. The low saturation voltage means that the transistor can switch at much higher speeds than other types, while the low gate-drain capacitance offers better signal integrity. Finally, the transistor is reliable due to its well-established epitaxial process. In summary, the DTA144WM3T5G is an ideal choice for high-speed switching applications where reliability and performance are key requiring factors. It offers many advantages such as low saturation voltage, low gate-drain capacitance, and high current gains, making it well-suited to use in switch-mode power supplies and power distribution systems, audio amplification, motor control, and high-voltage inverters.
The specific data is subject to PDF, and the above content is for reference
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