Allicdata Part #: | DTA144WUAT106TR-ND |
Manufacturer Part#: |
DTA144WUAT106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA144WUAT106 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 22 kOhms |
Base Part Number: | DTA144 |
Supplier Device Package: | UMT3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 30mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DTA144WUAT106 is a Pre-Biased Single Bipolar Junction Transistor (BJT) ideal for applications requiring high power output. It is a semiconductor device with three terminals, the Collector, the Base, and the emitter. Since it carries both a PNP and NPN section, the device can be used in a variety of configurations.
This device is the perfect choice when a system requires high DC current gains at high frequencies. The high frequency capability of this device results from the low input capacitance of the base and the low output capacitance of the collector. This means that the DTA144WUAT106 can provide up to 11A of DC current gain at frequencies as high as 100MHz, allowing for increased power output in the most demanding applications.
The DTA144WUAT106 also utilizes a base pre-biased architecture to provide improved reliability and higher efficiency than alternative BJT devices. This architecture increases the device\'s efficiency and reduces the amount of power dissipated by the device, allowing for greater power output with minimal power loss. This makes the device an ideal choice when dealing with limited space and power availability.
In order to function properly, the DTA144WUAT106 must be connected to a suitable driving circuit. When connected, the transistor works by increasing the current gain of the collector of the device by providing a higher base-emitter voltage, thus creating a much higher collector-emitter voltage. This increase in voltage results in an increase in current, allowing the device to amplify signals. The amount of current passed through the device is directly proportional to the amount of base-emitter voltage, allowing for precise control of the device\'s current gain.
The DTA144WUAT106 is an ideal choice for many applications that require high current gains, high efficiency, and a wide frequency range. It is also ideal for applications that require high power output and are limited by space or power restrictions. With its pre-biased architecture and high DC current gains at high frequencies, the DTA144WUAT106 ensures that applications which require power and speed receive the best results.
The specific data is subject to PDF, and the above content is for reference
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