DTA144WUAT106 Allicdata Electronics
Allicdata Part #:

DTA144WUAT106TR-ND

Manufacturer Part#:

DTA144WUAT106

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 200MW UMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA144WUAT106 datasheetDTA144WUAT106 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 22 kOhms
Base Part Number: DTA144
Supplier Device Package: UMT3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DTA144WUAT106 is a Pre-Biased Single Bipolar Junction Transistor (BJT) ideal for applications requiring high power output. It is a semiconductor device with three terminals, the Collector, the Base, and the emitter. Since it carries both a PNP and NPN section, the device can be used in a variety of configurations.

This device is the perfect choice when a system requires high DC current gains at high frequencies. The high frequency capability of this device results from the low input capacitance of the base and the low output capacitance of the collector. This means that the DTA144WUAT106 can provide up to 11A of DC current gain at frequencies as high as 100MHz, allowing for increased power output in the most demanding applications.

The DTA144WUAT106 also utilizes a base pre-biased architecture to provide improved reliability and higher efficiency than alternative BJT devices. This architecture increases the device\'s efficiency and reduces the amount of power dissipated by the device, allowing for greater power output with minimal power loss. This makes the device an ideal choice when dealing with limited space and power availability.

In order to function properly, the DTA144WUAT106 must be connected to a suitable driving circuit. When connected, the transistor works by increasing the current gain of the collector of the device by providing a higher base-emitter voltage, thus creating a much higher collector-emitter voltage. This increase in voltage results in an increase in current, allowing the device to amplify signals. The amount of current passed through the device is directly proportional to the amount of base-emitter voltage, allowing for precise control of the device\'s current gain.

The DTA144WUAT106 is an ideal choice for many applications that require high current gains, high efficiency, and a wide frequency range. It is also ideal for applications that require high power output and are limited by space or power restrictions. With its pre-biased architecture and high DC current gains at high frequencies, the DTA144WUAT106 ensures that applications which require power and speed receive the best results.

The specific data is subject to PDF, and the above content is for reference

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