Allicdata Part #: | EDB4064B3PB-8D-F-D-ND |
Manufacturer Part#: |
EDB4064B3PB-8D-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 216FBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 4Gb (64M x 64) Par... |
DataSheet: | EDB4064B3PB-8D-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 4Gb (64M x 64) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 216-WFBGA |
Supplier Device Package: | 216-FBGA (12x12) |
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EDB4064B3PB-8D-F-D is a type of integrated circuit, also known as a DRAM (Dynamic Random Access Memory), used for a wide range of modern applications. The chip is a 64k x 4 D-RAM used for a variety of applications including digital picture frames, mobile phones, and gaming consoles. It stands out among its peers due to its low active current, low power consumption, and high speed operation.
The EDB4064B3PB-8D-F-D is designed to store and provide rapid access to digital data by means of electric signals. The chip is organized into four kibibyte (a unit of 1024 bytes) memory blocks, each containing sixteen two-byte memory cells. The cells are arranged in rows and columns, and voltages applied to various pins or electrodes can be used to access, store, and modify the data.
The chip\'s three power modes are what determines its wide range of applications. The standard active mode consumes up to 125 milliamps, but this can be reduced to just 20 milliamps with the low power active mode. Finally, the standby mode reduces power consumption to a mere 5 milliamps. These power saving measures allow the EDB4064B3PB-8D-F-D to be used in devices that may be idle or rarely used.
The EDB4064B3PB-8D-F-D also features an operating frequency of up to 80 MHz, three times faster than its predecessors. The chip also incorporates other efficient features such as strong immunity to interference, reducing the read and write time. The chip\'s complementary signals reduces the need for more expensive logic circuitry, saving cost and space.
The EDB4064B3PB-8D-F-D has been the go-to Memory chip for a variety of consumer electronics since its launch in 2015. Its unique combination of fast speed, low power consumption and high immunity against interference make it the ideal memory chip for consumer electronics. Its small footprint and cost-effectiveness also has made it a favorite among manufacturers.
The EDB4064B3PB-8D-F-D is an integral part of the consumer electronics ecosystem, used in a range of high-performance systems. Its specialized capabilities have enabled it to excel in a wide range of applications and industries, from digital picture frames and video cameras to mobile phones and gaming consoles.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EDB4064B3PB-8D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216FB... |
EDB4064B3PD-8D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240FB... |
EDB4064B3PP-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240FB... |
EDB4432BBPE-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4064B4PB-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4432BBBH-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBPA-1D-F-D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 168FB... |
EDB4416BBBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4416BBBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4064B4PB-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4432BBBH-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBPA-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 168FB... |
EDB4064B4PB-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4064B4PB-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4432BBBJ-1D-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4064B4PB-1DIT-F-D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4416BBBH-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4064B4PB-1DIT-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAAT-F-D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 533MH... |
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