Allicdata Part #: | EDB4432BBBJ-1DAIT-F-RTR-ND |
Manufacturer Part#: |
EDB4432BBBJ-1DAIT-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 134FBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 4Gb (128M x 32) Pa... |
DataSheet: | EDB4432BBBJ-1DAIT-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 4Gb (128M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 134-WFBGA |
Supplier Device Package: | 134-FBGA (10x11.5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
EDB4432BBBJ-1DAIT-F-R TR is a memory that has broad application range and powerful performance. This type of memory is mainly used in storage of all kinds of data or program in computers, in order to satisfy the requirement of high performance. In this article, we will discuss about EDB4432BBBJ-1DAIT-F-R TR’s application field and its working principle.
Application Field
The EDB4432BBBJ-1DAIT-F-R TR memory can be used in many different areas. The most typical applications include:
- Desktop computers, laptops and other desktop systems
- Industrial control systems
- Servers and data storage platforms
- Computer peripherals
- Telecommunications systems
- Digital Signage systems
- Electronic payment systems
The EDB4432BBBJ-1DAIT-F-R TR memory is able to provide a reliable, high-performance storage solution for most platforms. It is not easily affected by the parameters of the system, making it a reliable and powerful choice.
Working Principle
The EDB4432BBBJ-1DAIT-F-R TR memory is based on the principle of storing data through the use of electric fields. It uses a number of electric field-sensitive components, including transistors and other electric field-sensitive materials. These components can detect changes in the electric field and store them as data, thus making it possible to store large amounts of data on a single device.
The EDB4432BBBJ-1DAIT-F-R TR memory is also equipped with error correction code (ECC) which allows it to detect and correct errors in the data that it has stored. ECC helps to ensure that data stored in the memory can be retrieved with integrity.
The EDB4432BBBJ-1DAIT-F-R TR memory also features a controller, which is responsible for controlling the flow of data through the device. This controller helps to ensure that the correct amount of data is stored in memory, thus avoiding any potential data loss.
In addition to this, the EDB4432BBBJ-1DAIT-F-R TR memory is also equipped with a number of configurable options, which allow users to customize the memory to suit their specific needs. This includes features such as setting the number of memory banks, setting the refresh rate, and so on. This allows the EDB4432BBBJ-1DAIT-F-R TR memory to be used in a variety of applications.
Conclusion
In conclusion, the EDB4432BBBJ-1DAIT-F-R TR memory is an extremely powerful and reliable memory solution which has a wide range of applications. Its working principle is based on the use of electric fields, making it more reliable than traditional memory solutions. Additionally, the EDB4432BBBJ-1DAIT-F-R TR memory also offers a number of configurable options, allowing it to be tailored to fit a variety of needs.
The specific data is subject to PDF, and the above content is for reference
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