Allicdata Part #: | EDB4064B4PB-1DIT-F-D-ND |
Manufacturer Part#: |
EDB4064B4PB-1DIT-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 533MHZ |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 4Gb (64M x 64) Par... |
DataSheet: | EDB4064B4PB-1DIT-F-D Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 4Gb (64M x 64) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
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The EDB4064B4PB-1DIT-F-D is a type of dynamic random access memory (DRAM) used in a wide range of application fields, from consumer electronics and automotive to industrial component usage. It is manufactured by ETC, a well-known producer of DRAM chips. The EDB4064B4PB-1DIT-F-D is a 64Mb DRAM chip with a 166 MHz memory access speed. It is packaged in a 208 ball FBGA (fine pitch ball grid array) to enable a smaller footprint.
Application Field
The EDB4064B4PB-1DIT-F-D provides an ideal solution for use in embedded system designs, offering an efficient way to store data and support program code execution. It is also used in PC applications such as network security solutions and data centers, providing an economical and reliable means of data storage. The chip is also used in industrial equipment such as control systems, video processing systems, printing equipment, and medical devices. It is also ideal for use in multimedia devices such as televisions, set-top boxes, gaming consoles, and digital cameras.
Working Principle
DRAM chips such as the EDB4064B4PB-1DIT-F-D are based on the principle of storing data through the use of transistors. A typical DRAM cell is composed of two transistors, one access transistor and one storage transistor. The access transistor is used to control the access to the memory cell, while the storage transistor stores the bit of data. The transistors are linked together to form a capacitor, which stores the electrical charge. When the memory cell is addressed, the access transistor is opened and the stored electrical charge is detected.
The EDB4064B4PB-1DIT-F-D is also capable of reading and writing data using page mode read and write operations. In page mode operations, the lower order bits of the address are used to access multiple cells in rapid succession. This enables faster read and write operations with less latency and less power consumption. The EDB4064B4PB-1DIT-F-D is equipped with an advanced data path controller that supports page mode operations, making it an ideal choice for embedded systems or applications with low power requirements.
The EDB4064B4PB-1DIT-F-D is also characterized by its low power consumption and high performance. The chip operates at a voltage range of 1.6V to 3.3V, allowing it to be used in a wide range of applications.
In addition, the EDB4064B4PB-1DIT-F-D also supports error-correcting code (ECC), a method of detecting and correcting data errors. This is especially beneficial for use in critical applications such as automotive and industrial, where data accuracy is of the utmost importance.
Overall, the EDB4064B4PB-1DIT-F-D is an ideal choice for use in a wide variety of embedded applications. Its low power consumption, high performance, and support for page mode operations make it an ideal choice for customers seeking an efficient and reliable memory solution.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDB4416BBBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4416BBBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4064B4PB-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4432BBBH-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBPA-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 168FB... |
EDB4064B4PB-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4064B4PB-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4432BBBJ-1D-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4064B4PB-1DIT-F-D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4416BBBH-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4064B4PB-1DIT-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
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