Allicdata Part #: | EDB4064B3PP-1D-F-D-ND |
Manufacturer Part#: |
EDB4064B3PP-1D-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 240FBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 4Gb (64M x 64) Par... |
DataSheet: | EDB4064B3PP-1D-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 4Gb (64M x 64) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 240-WFBGA |
Supplier Device Package: | 240-FBGA (14x14) |
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EDB4064B3PP-1D-F-D is a type of memory employed in many complex electronics applications. It provides increased levels of reliability and performance than traditional DRAM, while being able to store more data in the same amount of space. EDB4064B3PP-1D-F-D memory is commonly used in applications that require high-speed data storage and retrieval, such as in servers, embedded systems, and some gaming systems.
Application field
EDB4064B3PP-1D-F-D memory is often deployed in applications requiring high speed and low latency, including data centers for enterprise applications, server classrooms for educational environments, embedded systems in medical, industrial, and automotive applications, and graphics cards and gaming systems. In addition, EDB4064B3PP-1D-F-D memory has also been employed in applications such as networking (particularly in routers and switches), streaming media, and storage controllers.
Working principle
The EDB4064B3PP-1D-F-D memory works by storing data in a series of small, interconnected cells. These cells are organized in banks that can be accessed by applying different voltages to the cells. When a voltage is applied to a cell, it changes its state and stores the data. The data can then be retrieved or modified by applying a second voltage. By arranging the cells in banks, multiple pieces of data can be stored and retrieved quickly.
The EDB4064B3PP-1D-F-D memory also utilizes Error Correction Code (ECC) to ensure data integrity. ECC works by adding redundant bits to the data that are stored in the cells. If any of the data is corrupted due to noise or other interference, the redundant bits can be used to check the integrity of the data and correct any errors. This increases the reliability of the memory and ensures that the stored data is accurate.
The EDB4064B3PP-1D-F-D is a type of memory that offers many benefits over traditional DRAM. It is capable of storing much larger amounts of data while occupying the same amount of space, and is thus used in applications that require fast data access and reliable data integrity. By utilizing Error Correction Code and organizing data into banks, EDB4064B3PP-1D-F-D memory can ensure that data is stored and retrieved accurately and quickly.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDB4064B3PP-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240FB... |
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EDB4416BBBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4416BBBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4064B4PB-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4432BBBH-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBPA-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 168FB... |
EDB4064B4PB-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4064B4PB-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4432BBBJ-1D-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4064B4PB-1DIT-F-D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4416BBBH-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4064B4PB-1DIT-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAAT-F-D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 533MH... |
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