Allicdata Part #: | EDB4432BBBJ-1DAUT-F-D-ND |
Manufacturer Part#: |
EDB4432BBBJ-1DAUT-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 533MHZ |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 4Gb (128M x 32) Pa... |
DataSheet: | EDB4432BBBJ-1DAUT-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 4Gb (128M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 125°C (TC) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
EDB4432BBBJ-1DAUT-F-D is a kind of memory device that has various application fields. Its working principle is simple but effective. In this article, we will introduce its general application field, and get into more details in its working principle.
Application Field
The application field of EDB4432BBBJ-1DAUT-F-D memory can be divided into two categories: industrial applications and consumer applications. In industrial applications, it is mainly used in factories to store and control instructions or data related to equipment operation. For example, assemblers and robots will be equipped with enough EDB4432BBBJ-1DAUT-F-D memory devices to store the specific instructions and data needed to complete the tasks. It can also be used to store production parameters, making the operation of the production process more efficient. In consumer applications, EDB4432BBBJ-1DAUT-F-D memory devices are usually used in computers\' mainboard and other consumer electronic products like game consoles, televisions and mobile phones. With enough memory, it can help these consumer electronics operate faster and provide better user experience.
Working Principle
EDB4432BBBJ-1DAUT-F-D memory is a kind of Ram technology. It uses a mechanism called Dynamic Random Access Memory (DRAM) to store and retrieve data. In this mechanism, the data is stored in each cell of the device. This cell consists of two parts. One part of the cell is a capacitor, and the other part is a transistor. The capacitor is used to store the electric charge, while the transistor acts as a switch that determines whether each cell will be on or off. When the capacitor is charged, the transistor allows the cell to be on, and vice versa.
When the electric charge is applied to a cell, it will signal the read or write operation of the device. During the operation, the charge in the cells will be depleted and will need to be refilled before the operation can be continued. The DRAM mechanism will be able to read and write data at very high speeds by using the electric charge in the cells.
In conclusion, EDB4432BBBJ-1DAUT-F-D memory is a kind of memory device that can be used for both industrial and consumer applications. It works based on the mechanism called DRAM, which is used to store and retrieve data in the cells. With enough memory, it can help the consumer electronics operate faster and provide better user experience. It can also be used to store production parameters in factories, making the operation of the production process more efficient.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EDB4064B3PB-8D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216FB... |
EDB4064B3PD-8D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240FB... |
EDB4064B3PP-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240FB... |
EDB4432BBPE-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4064B4PB-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4432BBBH-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBPA-1D-F-D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 168FB... |
EDB4416BBBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4416BBBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4064B4PB-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4432BBBH-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBBJ-1DAIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4432BBPA-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 168FB... |
EDB4064B4PB-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4064B4PB-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 216WF... |
EDB4432BBBJ-1D-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 134FB... |
EDB4064B4PB-1DIT-F-D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4416BBBH-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4064B4PB-1DIT-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 533MH... |
EDB4432BBBJ-1DAAT-F-D | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 533MH... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...