EDB4432BBBJ-1DAUT-F-D Allicdata Electronics
Allicdata Part #:

EDB4432BBBJ-1DAUT-F-D-ND

Manufacturer Part#:

EDB4432BBBJ-1DAUT-F-D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 4G PARALLEL 533MHZ
More Detail: SDRAM - Mobile LPDDR2 Memory IC 4Gb (128M x 32) Pa...
DataSheet: EDB4432BBBJ-1DAUT-F-D datasheetEDB4432BBBJ-1DAUT-F-D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 125°C (TC)
Description

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EDB4432BBBJ-1DAUT-F-D is a kind of memory device that has various application fields. Its working principle is simple but effective. In this article, we will introduce its general application field, and get into more details in its working principle.

Application Field

The application field of EDB4432BBBJ-1DAUT-F-D memory can be divided into two categories: industrial applications and consumer applications. In industrial applications, it is mainly used in factories to store and control instructions or data related to equipment operation. For example, assemblers and robots will be equipped with enough EDB4432BBBJ-1DAUT-F-D memory devices to store the specific instructions and data needed to complete the tasks. It can also be used to store production parameters, making the operation of the production process more efficient. In consumer applications, EDB4432BBBJ-1DAUT-F-D memory devices are usually used in computers\' mainboard and other consumer electronic products like game consoles, televisions and mobile phones. With enough memory, it can help these consumer electronics operate faster and provide better user experience.

Working Principle

EDB4432BBBJ-1DAUT-F-D memory is a kind of Ram technology. It uses a mechanism called Dynamic Random Access Memory (DRAM) to store and retrieve data. In this mechanism, the data is stored in each cell of the device. This cell consists of two parts. One part of the cell is a capacitor, and the other part is a transistor. The capacitor is used to store the electric charge, while the transistor acts as a switch that determines whether each cell will be on or off. When the capacitor is charged, the transistor allows the cell to be on, and vice versa.

When the electric charge is applied to a cell, it will signal the read or write operation of the device. During the operation, the charge in the cells will be depleted and will need to be refilled before the operation can be continued. The DRAM mechanism will be able to read and write data at very high speeds by using the electric charge in the cells.

In conclusion, EDB4432BBBJ-1DAUT-F-D memory is a kind of memory device that can be used for both industrial and consumer applications. It works based on the mechanism called DRAM, which is used to store and retrieve data in the cells. With enough memory, it can help the consumer electronics operate faster and provide better user experience. It can also be used to store production parameters in factories, making the operation of the production process more efficient.

The specific data is subject to PDF, and the above content is for reference

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