Allicdata Part #: | EDB4432BBBJ-1DAUT-F-RTR-ND |
Manufacturer Part#: |
EDB4432BBBJ-1DAUT-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 533MHZ |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 4Gb (128M x 32) Pa... |
DataSheet: | EDB4432BBBJ-1DAUT-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 4Gb (128M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 125°C (TC) |
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EDB4432BBBJ-1DAUT-F-R TR are a type of random access memories (RAM), which are used primarily in digital electronics. They provide an efficient way of storing and accessing data and can be used in many different electronic applications. This article provides an overview of the application field and working principle of EDB4432BBBJ-1DAUT-F-R TR.
EDB4432BBBJ-1DAUT-F-R TR can be found in a variety of applications. They are often used in embedded systems as it provides a reliable way of storing data without the need for external storage devices. They are also widely used in industrial processes such as process control, automation and robotics. They are also used in telecommunications systems, such as mobile phone handsets, base stations and network switching systems. Furthermore, they are also used in data communication systems, such as network routers, switches and hubs.
In terms of working principle, EDB4432BBBJ-1DAUT-F-R TR consists of a set of memory cells that store digital information. Each memory cell is made up of two transistors, which are also referred to as cells or bits. The transistors are what allows the EDB4432BBBJ-1DAUT-F-R TR to store digital information. The transistors are also arranged in rows and columns, with each row providing a single bit of data. When a particular bit needs to be read or written, the memory address corresponding to that bit must be provided. This address is then used to access the memory cell containing the relevant bit.
In addition to the memory cells, EDB4432BBBJ-1DAUT-F-R TR also contains a number of control elements. These control elements enable the memory to be read and written from, as well as enabling it to process any commands given by the user. These control elements include logic gates, flip-flops and other components. The control elements are responsible for decoding the address that is given and then selecting the correct memory cell. They also ensure that all the bits in the memory cell can be read and written in a reliable manner.
The major advantage of EDB4432BBBJ-1DAUT-F-R TR is that they provide a fast and reliable way of storing digital information. They also consume much less power than other types of RAM, making them ideal for applications where power consumption is important. Furthermore, they are also relatively cheap, which makes them suitable for applications where cost is a major factor. However, they also have some disadvantages, such as the fact that they are limited in their storage capacity and can be difficult to configure for specific applications.
In conclusion, EDB4432BBBJ-1DAUT-F-R TR is a type of random access memories that can be used in a wide range of applications. They provide an efficient way of storing and accessing data and consume less power than other types of RAM. They can be found in embedded systems, industrial processes, telecommunications systems and data communication systems. The major advantage of EDB4432BBBJ-1DAUT-F-R TR is that they provide a fast and reliable way of storing digital information. However, they also have some drawbacks, such as their limited storage capacity and their difficulty to configure for specific applications.
The specific data is subject to PDF, and the above content is for reference
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