EDB4432BBBJ-1DAIT-F-D Allicdata Electronics
Allicdata Part #:

EDB4432BBBJ-1DAIT-F-D-ND

Manufacturer Part#:

EDB4432BBBJ-1DAIT-F-D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 4G PARALLEL 134FBGA
More Detail: SDRAM - Mobile LPDDR2 Memory IC 4Gb (128M x 32) Pa...
DataSheet: EDB4432BBBJ-1DAIT-F-D datasheetEDB4432BBBJ-1DAIT-F-D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-WFBGA
Supplier Device Package: 134-FBGA (10x11.5)
Description

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The EDB4432BBBJ-1DAIT-F-D is a dynamic random access memory (DRAM) chips that is widely used in the electronics industry. It is a double data rate (DDR) DRAM with 3.2Gbps bandwidth and 4bit prefetch buffer. The EDB4432BBBJ-1DAIT-F-D provides high performance and high performance-per-watt due to its unique design.

The EDB4432BBBJ-1DAIT-F-D is a 64Mb (8Mx8) synchronous DRAM that operates on a 2.5V power supply with a 2.5V I/O voltage range. It is suitable for low-power systems and supports LV-TTL, LVCMOS, and other interface types. The DRAM has a JEDEC-approved package measuring 13mm x 13mm.

The EDB4432BBBJ-1DAIT-F-D is a component that can be used in many applications. It is commonly used in consumer applications, such as gaming consoles, cameras, portable media players, and other consumer electronics devices. It can also be used in industrial and automotive applications. It can be used in embedded systems, such as programmable logic controllers (PLCs), industrial controllers, and motor controllers.

In addition to its wide range of applications, the EDB4432BBBJ-1DAIT-F-D is a reliable component with a long MTBF (mean time between failures) of 500,000 hours and high operating temperature of up to +90°C. It is also RoHS compliant and environmentally friendly.

The EDB4432BBBJ-1DAIT-F-D has a simple working principle. It consists of a set of memory cells arranged in an array. When a read or write operation is requested, the memory cells are accessed. The EDB4432BBBJ-1DAIT-F-D reads data from the memory cells and writes data to the memory cells using a built-in switching matrix. This allows the EDB4432BBBJ-1DAIT-F-D to be used in a wide range of applications, including consumer, industrial, and automotive.

The EDB4432BBBJ-1DAIT-F-D is a versatile and reliable DRAM chip that is widely used in consumer, industrial, and automotive applications. It is a 3.2Gbps DDR DRAM with 4bit prefetch buffer. It has a long MTBF of 500,000 hours and RoHS compliant and environment friendly. The DRAM has a simple working principle and provides high performance and high performance-per-watt due to its unique design.

The specific data is subject to PDF, and the above content is for reference

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