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Memory

The EDB4432BBPA-1D-F-D is a 32Mb, parallel non-volatile SRAM. It is used in networking, industrial automation, automotive and other applications that require a high density, high speed, low power and non-volatile SRAM.

Features

• 32Mb of Non-volatile memory
• 1.8V, 3.0V and 5.0V Operating Voltage Ranges
• 2.5V Data Retention Voltage Range
• 3.3V and 5.0V CMOS Compatible I/O
• 8 and 16 Bit Asynchronous Interface
• Hot Insertion Capable with SMT Package
• Programmable Power-down Mode
• Temperature Range: -40°C to +85°C

Applications

• Networking and Telecommunication Equipment
• Industrial Automation
• Automotive Applications
• Multi-Function Printers
• Digital Printing Equipment

Working Principle

The EDB4432BBPA-1D-F-D is a 32Mb, parallel non-volatile SRAM. It is designed for use in networking and industrial applications that require a high density, high speed, low power and non-volatile SRAM memory. The device features a fast 8-bit asynchronous interface and supports a wide operating voltage range from 1.8V to 5V.

The device can be programmed and erased electrically, without the need for an external programmer. It has an operating temperature range of -40°C to +85°C and its non-volatile nature means that data can be stored even after power is removed.

The chip has an 8-bit asynchronous configuration, that allows data to be written or read at a speed of up to 40MHz. It has a low power consumption and can be programmed at a low voltage of 1.8V, enabling it to work in a wide range of applications.

The chip also has programmable power-down mode. This mode can be used to reduce power consumption when the device is not being used, thus prolonging its life and reducing the amount of energy it requires.

Overall, the EDB4432BBPA-1D-F-D is an ideal choice for applications that require a high density, high speed, low power and non-volatile SRAM memory. It is capable of reliably storing data for a long time and is perfect for use in networking and industrial applications.

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