EDB4432BBPE-1D-F-D Allicdata Electronics
Allicdata Part #:

EDB4432BBPE-1D-F-D-ND

Manufacturer Part#:

EDB4432BBPE-1D-F-D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 4G PARALLEL 533MHZ
More Detail: SDRAM - Mobile LPDDR2 Memory IC 4Gb (128M x 32) Pa...
DataSheet: EDB4432BBPE-1D-F-D datasheetEDB4432BBPE-1D-F-D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

EDB4432BBPE-1D-F-D is one of the most valuable memories, which specialized in providing cost effective, high performance and reliable dynamic random access memory(DRAM) to customers. It is a specific type of memory with all the functions of dynamic random access memory and a wide range of applications.

Application Field

EDB4432BBPE-1D-F-D is perfectly optimized for most general purpose computing memories. It can be applied to a variety of fields such as enterprise-level computer systems, embedded systems, workstations and servers. Generally, customers prefer EDB4432BBPE-1D-F-D for its high capacity, low profile and small size, as well as its strong performance and reliability.

Moreover, its applications span across a wide range of devices such as multimedia cards, flash memory, microprocessors, PCI Express systems, memory cards, push buttons and so on. In these cases, EDB4432BBPE-1D-F-D provides superior access speed, expanded memory capacity and cost effective performance. Thus, it is an ideal choice of memory for these specific applications.

Working Principle

EDB4432BBPE-1D-F-D working principle basically consists of four different operations: read, write, refresh and precharge. Each operation has its own particular purpose and is executed in a specific order.

The read operation retrieves the data from the memory. It works by receiving an address from the memory controller and then searching for it within the memory array. Once the data is found, it is transferred to the data bus. The write operation stores the data in the memory. It works by sending an address to the memory array and then writing the data in that memory location.

The refresh operation ensures that the memory stays up and running for a longer period of time. It works by periodically scanning the entire memory array and restoring those areas of the memory that has become corrupted. Finally, the precharge operation clears the entire memory array and prepares the memory for a new cycle of operation.

Overall, EDB4432BBPE-1D-F-D’s working principle has been designed to increase its performance and reliability, making it the ideal choice for many customers.

The specific data is subject to PDF, and the above content is for reference

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