Allicdata Part #: | EFC6601R-A-TR-ND |
Manufacturer Part#: |
EFC6601R-A-TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH EFCP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 2W ... |
DataSheet: | EFC6601R-A-TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 2W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFBGA, FCBGA |
Supplier Device Package: | EFCP2718-6CE-020 |
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.The EFC6601R-A-TR is a dual 20A Trench FET array. It is an ideal candidate for power stages that deal with high current and require a compact footprint. This FET array combines two 20A MOSFETs on a single package, enabling easier management of power control and thermal dissipation.
In terms of application field, the EFC6601R-A-TR can be used In a variety of circuits, from power supplies and motor controllers to amplifiers and power conditioning stages. Its low on-resistance and small package size make it suitable for applications with high current and large power dissipation. It is particularly suitable for power stages with tight thermal budgets, such as in servers, networking equipment, and telecom systems.
As for its working principle, the EFC6601R-A-TR is an n-channel enhancement type MOSFET array, meaning it operates by suppressing electron flow while turning on, and allowing electron flow while turned off. It is driven by a gate voltage. When a voltage is applied to the gate, the FET is "turned on," allowing current flow from the drain to the source. When a voltage is not applied to the gate, the FET is "turned off," preventing current flow from the drain to the source.
The distinct advantage of the EFC6601R-A-TR is its ability to integrate two FETs into a single package. This reduces the footprint of an application and requires fewer external components for the same circuit. The on-resistance of the two FETs may be connected in parallel for higher current, or in series for higher voltage capability.
To summarize, the EFC6601R-A-TR is a Trench FET array, consisting of two 20A MOSFETs in a single package. It can be used in a variety of applications, such as power supplies, motor controllers, amplifiers, and power conditioning stages. It is an n-channel enhancement type FET, driven by a gate voltage, which is turned on by applying a voltage to the gate, and turned off by not applying a voltage to the gate. The distinct advantage of the EFC6601R-A-TR is its ability to integrate two FETs, allowing for easier power control and thermal dissipation.
The specific data is subject to PDF, and the above content is for reference
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