Allicdata Part #: | EFC6612R-A-TF-ND |
Manufacturer Part#: |
EFC6612R-A-TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 23A EFCP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 2.5... |
DataSheet: | EFC6612R-A-TF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 2.5W |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, No Lead |
Supplier Device Package: | 6-CSP (1.77x3.54) |
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Application Field and Working Principle of EFC6612R-A-TF
The EFC6612R-A-TF is an integrated device belonging to the family of transistors, FETs and MOSFETs, specifically the array. It is a versatile high-performance type of transistor designed to provide superior power performance.
Application Field
The EFC6612R-A-TF was designed to mainly work as a power switch for high-performance applications. Some of its features make it suitable for high current control and power applications such as power converters and Inverters, class D audio amplifiers or for use in automotive battery management systems. This device was also designed to be used in stationary applications such as solar energy or wind turbines.
Working Principle of EFC6612R-A-TF
The EFC6612R-A-TF is a high-voltage power MOSFET array designed to provide superior performance in various applications while providing the user with robust protection features.
This device is based on an 8-channel enhancement-mode MOSFET array integrated on a single die and supplied in a butterfly package. This array consists of eight N-channel MOSFETs. It has a built-in reverse-bias drain-to-source voltage protection which drastically reduces the leakage current at zero gate-source voltage.
The EFC6612R-A-TF also features an integrated anti-parallel diode connected to the drain. This diode provides significantly reduced propagation delay and enables high-frequency operation, making it an attractive choice for applications where fast switching times are desired.
The device also features a wide operating gate-source voltage range, from -7V to 12V, and can be used in both high and low side applications. The high maximum current rating of the device makes it an ideal for high power applications. The high power dissipation, low leakage current and high safe operating area make it a perfect choice for automotive, energy and industrial applications.
Overall, the EFC6612R-A-TF is an excellent choice for high-performance applications that require fast switching, robust protection features and a wide operating voltage range.
The specific data is subject to PDF, and the above content is for reference
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