Allicdata Part #: | EFC6612R-TF-ND |
Manufacturer Part#: |
EFC6612R-TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 23A EFCP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 2.5... |
DataSheet: | EFC6612R-TF Datasheet/PDF |
Quantity: | 1000 |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, No Lead |
Supplier Device Package: | 6-CSP (1.77x3.54) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 2.5W |
Operating Temperature: | 150°C (TJ) |
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:The EFC6612R-TF is a high-performance isolated FET array that is designed for applications that require isolation and robust operation in high-temperature environments. This device has an input voltage range of 5-100V, a maximum operating temperature of 175°C and an operating voltage range of 2.6 V to 5.5 V. This makes it ideal for applications that require high-voltage isolation, robust operation in high-temperature environments and low power consumption. The EFC6612R-TF is designed to provide reliable operation in extreme temperatures and humidity conditions.
The EFC6612R-TF features a robust power MOSFET array capable of delivering high current and sustained high voltage. It includes two terminal arrays –Source and drain – which is connected to individual drivers used to control the current to each of the devices in the array. The Source must be connected to one of the power supplies, whereas the Drain is connected to the output device. The drivers are controlled by an Input-Output (I/O) interface and are programmed using I2C commands.
When the device is powered up, the drivers initialize and apply a voltage to the appropriate Source-Drain pairs depending on the I/O configuration. This enables the EFC6612R-TF to effectively control the output device current and voltage. The I/O interface can also be used to store and recall settings such as maximum current limit, minimum gate voltage, and maximum on time.
The EFC6612R-TF contains additional control features, such as open drain fault reporting and built-in temperature monitoring. This ensures that the device is always within its safe operating limits, and can respond to changing conditions quickly and effectively. Additionally, the device supports multiple safety features such as overvoltage protection, overtemperature protection, and overcurrent protection.
Due to its robust design, the EFC6612R-TF is suitable for a wide range of applications, including industrial, consumer, and automotive, making it one of the most versatile MOSFET arrays on the market. The device is also designed for use in applications that require tight control over power dissipation, with a low on-resistance (RDSon) of 0.03 Ohm, a high-frequency operating range up to 500 kHz and a wide operating temperature range of -45°C to 175°C.
The EFC6612R-TF is a versatile and reliable FET array capable of delivering high current and sustained high voltage in demanding applications. It features safe and reliable operation, incredible efficiency, and minimal power consumption. With a wide operating temperature range and a robust MOSFET array, this device is an ideal choice for applications that require high-voltage isolation and robust operation in extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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