EFC6601R-TR Allicdata Electronics
Allicdata Part #:

EFC6601R-TROSTR-ND

Manufacturer Part#:

EFC6601R-TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH EFCP
More Detail: Mosfet Array 2 N-Channel (Dual) 2W Surface Mount...
DataSheet: EFC6601R-TR datasheetEFC6601R-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, FCBGA
Supplier Device Package: EFCP2718-6CE-020
Description

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The EFC6601R-TR is a transistor with an array of field-effect transistors (FETs) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). FETs are devices that are used to control electric currents, and MOSFETs are devices that use an oxide film to separate the channels between two terminals of an electronics device. Both FETs and MOSFETs are used in a wide range of applications, such as amplifiers, power control circuits, and switching applications. The EFC6601R-TR is a package of 8 FETs and 8 MOSFETs with a total of 16 channels.

The primary application of the EFC6601R-TR is in power control. This transistor array is designed to provide precise control over the electrical current which can be input into and output from a variety of different power systems. This is accomplished through the use of the built-in FETs and MOSFETs which provide precise control over the switching of power and the flow of current through the power system.

The EFC6601R-TR works on a principle of controlling the flow of electric current by means of voltage and temperature-dependent field-effect transistors placed in an array. When a gate voltage is applied, electrons are attracted to the source and the drain terminals of the device, which creates a channel between the two terminals. This channel is then used to control the current flow. As the temperature changes, the conductivity of the channel also changes, offering precise control over the operation of the power system.

The EFC6601R-TR also provides protection against over-current, over-voltage, reverse-current, and transient events. This is done by using a variety of different protection mechanisms, such as over-voltage protection, reverse-current protection, and transient protection. These protection mechanisms help to ensure that the power system remains safe and reliable during operation.

In addition to its primary application in power control, the EFC6601R-TR can also be used in a wide range of other applications. It can be used as a switch in digital circuits, as a driver in amplifiers, as a high-frequency mixer, and in high-power motors. The device can also be used in applications that require high-temperature tolerance, such as in space or undersea applications.

The EFC6601R-TR is a highly versatile device which can be used for a variety of different applications. It provides precise control over the power system through the use of its FETs and MOSFETs, and offers additional protection against a variety of over-voltage and transient conditions. The device is suitable for use in a wide range of applications, including power control, amplifiers, switches, and high-power motors.

The specific data is subject to PDF, and the above content is for reference

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