Allicdata Part #: | EFC6604R-A-TR-ND |
Manufacturer Part#: |
EFC6604R-A-TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 24V 6A EFCP |
More Detail: | MOSFET N-CH 24V 6A EFCP |
DataSheet: | EFC6604R-A-TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-EFCP (1.9x1.46) |
Package / Case: | 6-XFBGA |
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The EFC6604R-A-TR is a type of single-gate field-effect transistor (FET) that is used in many kinds of Electronic Design and Manufacture (ED/M) today. Its most common application is in power management and high voltage switching. The EFC6604R-A-TR is a high-performance FET that is fast, efficient, and reliable.
A field-effect transistor (FET) is an active electronic component that is used to control the electrical properties of a circuit element that is connected to it. FETs have three terminal connections, a drain, a source, and a gate. The gate is the control point where a small voltage is applied that affects the resistance of the transistor. FETs are usually classified into two general categories, bipolar junction transistors (BJTs) and field-effect transistors (FETs). FETs are usually used for high-speed switching applications, and BJTs are usually used for linear devices such as amplifiers and converters.
The EFC6604R-A-TR is a single-gate FET that is designed for a wide range of applications in various ED/M projects. This FET is most frequently used in power management applications, high voltage switching applications, and other applications where low on-resistance is required. Its most common application is in automotive applications, but it is also used in many other electronic designs.
The working principle of the EFC6604R-A-TR is based on the principle of transistor action. Transistors are active components that use a voltage at the gate to control the current between the drain and the source. In the case of the EFC6604R-A-TR, the voltage at the gate modifies the channel resistance between the drain and the source, allowing for high switching speeds, low on-resistance, and high reliability. This ability of the EFC6604R-A-TR to rapidly switch between low and high resistance is what makes it so popular in power management and high voltage switching applications.
The EFC6604R-A-TR is also designed for easy integration into many types of ED/M projects. It is available in a standard surface-mount package, and can be used in most standard layouts and designs. The EFC6604R-A-TR also has a very low on-state resistance, allowing for efficient and reliable operation in most applications.
The EFC6604R-A-TR is an excellent choice for many ED/M applications that require efficient, reliable, and fast switching transistors. It is designed for a wide range of applications, from automotive to many other ED/M projects. Its high performance, low on-resistance, fast switching speeds, and easy integration make the EFC6604R-A-TR a reliable and trusted choice for many ED/M applications.
The specific data is subject to PDF, and the above content is for reference
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