Allicdata Part #: | EFC6617R-TF-ND |
Manufacturer Part#: |
EFC6617R-TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH EFCP |
More Detail: | Mosfet Array |
DataSheet: | EFC6617R-TF Datasheet/PDF |
Quantity: | 1000 |
Series: | * |
Part Status: | Active |
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The EFC6617R-TF is an integrated circuit used in various electronic devices. This type of integrated circuit is categorized as transistors - FETs, MOSFETs - Arrays. It is designed for low voltage operation, making it suitable for use in portable electronic applications. The EFC6617R-TF provides a low on-resistance and robust source to source current handling capability, making it suitable for a variety of applications.
The EFC6617R-TF is a type of N-channel MOSFET Array. It features eight fet channels, allowing for a wide range of applications. Each channel has its own separate gate and source connections, as well as a drain common to all channels. In addition, the EFC6617R-TF has an internal ESD (electrostatic discharge) protection circuit which protects the circuit from damage due to static electricity, making it suitable for use in devices which are handled regularly and may be exposed to static electricity.
The EFC6617R-TF has a wide range of applications. It is commonly used as an amplifier or switch, converting a low voltage input into a higher voltage output. It is also used as a linear regulator, providing a stable output voltage. The EFC6617R-TF can also be used for level shifting, which is the conversion of a low voltage signal to a higher voltage signal. In addition, the EFC6617R-TF can be used as a buffer, providing low on-resistance and robust current handling capabilities.
The working principle of the EFC6617R-TF is based on the basic principles of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). The EFC6617R-TF consists of a number of MOSFETs arranged in a vertical array, with each MOSFET having its own individual gate, source, and drain connections. The gate connections control the current flow through the MOSFETs, while the source and drains provide the voltage necessary to activate or deactivate them. The EFC6617R-TF can be operated in a mode in which it is turned on by a logic high input, or in a mode in which it is turned off with a logic low input.
When the EFC6617R-TF is in the “on” state, the gate connections act as switches, allowing current to pass through the MOSFET array. When the gate connections receive a logic high, the allowed current increases, and when the gates receive a logic low, the current is reduced. The source and drain connections provide the necessary voltage to keep the current flow within a desired range. The EFC6617R-TF is designed to draw very minimal current, making it energy-efficient for most applications.
The EFC6617R-TF is a versatile integrated circuit with many uses in the electronics industry. It is suitable for low-power, portable devices, and provides an efficient way to amplify, shift, or switch voltage levels. Its array of MOSFETs makes it suitable for multiple applications, as each channel can be used separately or in combination. Moreover, the EFC6617R-TF’s internal ESD protection circuit makes it ideal for use in portable devices.
The specific data is subject to PDF, and the above content is for reference
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