EFC6602R-TR Discrete Semiconductor Products

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The EFC6602R-TR is a dual P-channel, logic level, MOSFET array. Designed for applications requiring low on-resistance, attention should be given to the maximum power rating and how power dissipation figures are specified. This device can be used in applications such as USB port switching, interface to logic and data line switching, along with load and deflection control, and other low voltage applications.

The EFC6602R-TR is constructed in a 6-lead surface mount package featuring two isolated P-channel MOSFETs and internal gate protection. The device is internally diode clamped and has a split drain structure with internal diodes to reduce Vmax drop. Its low on-resistance can be further reduced when driven in parallel with a second device. On resistance is specified at 25°C and a VGS of 4.5V.

The device has typical gate charge of 0.4 nC at the 4.5V drain, the on-state threshold voltage of the device is 2.3V. The RDS(on) is thermally downgraded at higher temperatures, with a maximum drain current of 27A at 25°C. Tj max is 150°C.

The EFC6602R-TR\'s main application is as an interface to logic and data line switching. For example, it can be used to switch between USB ports to improve data rates and reduce latency. In addition, the low on-resistance of this device makes it ideal for controlling large loads such as motors, transformers, and even deflection control. The device is also suitable for other low voltage applications including load switching and power management.

The working principle of the EFC6602R-TR is relatively simple. When a voltage is applied to the gate of the device, an electric field is generated which forms a conducting channel between the source and drain. As the channel is formed and the drain-source resistance decreases, a current is able to flow between the two terminals. The channel is modulated by the voltage on the gate terminal, thus controlling the amount of current flowing through the device.

In summary, the EFC6602R-TR is a dual P-channel, logic level, MOSFET array. Its low on-resistance makes it suitable for switching between USB ports and controlling large loads like motors and transformers. Its internal diode clamped and split drain structure reduce Vmax drop, while the low on-resistance can be manipulated when parallel to a second device. The device works by forming a conducting channel between the source and drain when voltage is applied to the gate, thus allowing a current to flow through the device.

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