EFC6604R-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):	--
Current - Continuous Drain (Id) @ 25°C:	--
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	1.6W
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-XFBGA
Supplier Device Package:	6-EFCP (1.9x1.46)

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EFC6604R-TR Application Field and Working Principle

EFC6604R-TR is a dual P-channel TrenchMOS (Metal Oxide Semiconductor) array with a 3-2-2 design. It is primarily used to enable low ON resistances and low threshold voltage. This component is distributed by NXP Semiconductors and it is widely used in low power circuit designs.

Applications

EFC6604R-TR is widely used in applications such as mobile phones and laptops as well as automotive, medical, and consumer electronics such as televisions and DVD players. In mobile phones, EFC6604R-TR is used for power rail applications such as CPU and other processor supplies, voltage regulator modules, general switch mode power supplies, and DC-DC converters. In laptops, EFC6604R-TR is used for low power circuit applications such as motor control and AC/DC power converters. In automotive applications, EFC6604R-TR is used for power management and anti-lock breaking systems as well as for peripheral device control and power regulation. In medical applications, EFC6604R-TR is often used for high voltage circuits and control boards. Furthermore, EFC6604R-TR is used in consumer electronics such as DVD players and TVs to control the output waveform of the rectified power fed to the load.

Design

EFC6604R-TR is a dual P-channel TrenchMOS array that has 18 P-channel enhancement type MOSFET transistors. These transistors are driven in parallel to each other in order to provide a very low R_DS(ON) level, allowing for efficient power delivery at low voltages. The EFC6604R-TR is designed to provide a low R_DS(ON) (< 1.96 Ohms) for efficient power delivery at low voltages. It also provides a low Vth (1.4V) for improved efficiency at lower voltage levels. This component is thermally enhanced for improved thermal performance, allowing for a prolonged operation at higher power levels.

Working Principle

The working principle of the EFC6604R-TR is the same as other MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) arrays. It uses three metal layers in order to form a trench between the drain and source, which is filled with dielectric material. The application of a voltage to the gate terminal causes electrons to accumulate in the surface adjacent to the gate, creating a conductive channel between the drain and source. The width and resistance of the channel (R_DS(ON)) is determined by the voltage applied to the gate terminal and the properties of the dielectric material in the trench. The combination of the MOSFET array and the low profile package of the EFC6604R-TR provides a compact and reliable solution for power delivery at low voltages, reducing power losses and increasing efficiency. Furthermore, the low Vth and R_DS(ON) levels help reduce unwanted voltage drops and improve efficiency even further.

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