| Allicdata Part #: | ESH2DM4G-ND |
| Manufacturer Part#: |
ESH2D M4G |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 200V 2A DO214AA |
| More Detail: | Diode Standard 200V 2A Surface Mount DO-214AA (SMB... |
| DataSheet: | ESH2D M4G Datasheet/PDF |
| Quantity: | 1000 |
| 6000 +: | $ 0.06870 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 2A |
| Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 20ns |
| Current - Reverse Leakage @ Vr: | 2µA @ 200V |
| Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | DO-214AA (SMB) |
| Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes - Rectifiers - Single: ESH2D M4G Application Field and Working Principle
As the development of the electronic industry is always evolving, the application of electronic components is no different. The ESH2D M4G rectifier diode comes in a small singe package, making it suitable for a wide range of applications. This article will delve into the application field and working principle of the ESH2D M4G rectifier diode.
Application Field
The ESH2D M4G rectifier diode is used in many electronics applications, such as power converters, DC-DC converters, UPS, LED lighting, and other switching applications. The rectifier diode can be used as the main rectifier element in AC-DC converters and is widely used in a wide range of applications.
The rectifier diode also has a wide range of features. The features include low voltage drop, reverse polarity protection, surge protection, low leakage current, low EMI noise generation, short recovery time, and reverse recovery time reduction. This rectifier diode is also able to withstand a high surge current, which makes it suitable for surge protection applications.
Working Principle
The working principle of the ESH2D M4G rectifier diode is based on the principle of electrical conduction in a semiconductor. This rectifier diode has a PN junction in which one side is positively charged and the other side is negatively charged. As the voltage is applied across the PN junction, current flows from the positively charged side to the negatively charged side. Thus, the ESH2D M4G rectifier diode can be used as a switch to control the flow of current in an electronic circuit.
When the rectifier diode is forward biased, it allows current to flow from its anode to its cathode. The current flow is determined by the voltage applied across the PN junction. When the rectifier diode is reverse biased, it prevents current from flowing between its two terminals, thus providing a path to direct current in one direction.
The ESH2D M4G rectifier diode also features high surge withstand capability and low forward voltage drop. This helps to reduce the power loss in the circuit and improve the efficiency of the system. Moreover, the ESH2D M4G rectifier diode also has a high reverse breakdown voltage, which allows for higher voltage applications. The rectifier diode also has low reverse leakage current, thus increasing the efficiency of the system.
Conclusion
In conclusion, the ESH2D M4G rectifier diode is a great choice for a wide range of electronic applications. It features a low forward voltage drop and can withstand high surge currents. Additionally, it has a low reverse leakage current, making it suitable for high voltage applications. The ESH2D M4G rectifier diode is a great solution for power converters, DC-DC converters, UPS, LED lighting, and other switching applications.
The specific data is subject to PDF, and the above content is for reference
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| ESH2PC-M3/85A | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2B R5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH2CHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2C M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2D M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
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| ESH2B-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH2C-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2DHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2DHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
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| ESH227M050AH2AA | KEMET | 0.23 $ | 1977 | CAP ALUM 220UF 20% 50V RA... |
| ESH2CA R3G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ESH2PDHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2D-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2DA M2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| ESH2PD-M3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH227M050AH1AA | KEMET | 0.25 $ | 8027 | CAP ALUM 220UF 20% 50V RA... |
| ESH2CHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2PB-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH2DA R3G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| ESH2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH2PD-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
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ESH2D M4G Datasheet/PDF