| Allicdata Part #: | ESH2PDHE3/84A-ND |
| Manufacturer Part#: |
ESH2PDHE3/84A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 200V 2A DO220AA |
| More Detail: | Diode Standard 200V 2A Surface Mount DO-220AA (SMP... |
| DataSheet: | ESH2PDHE3/84A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | eSMP® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 2A |
| Voltage - Forward (Vf) (Max) @ If: | 980mV @ 2A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 25ns |
| Current - Reverse Leakage @ Vr: | 1µA @ 200V |
| Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-220AA |
| Supplier Device Package: | DO-220AA (SMP) |
| Operating Temperature - Junction: | -55°C ~ 175°C |
| Base Part Number: | ESH2PD |
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The ESH2PDHE3/84A is a single diode rectifier designed to be used in a variety of applications. This device is a silicon rectifier diode rated at 120mA with a p-type junction. The diode has an integrated body design and can be used in applications requiring high speed switching, low-noise switching, or improved switching noise immunity. The junction also features high surge tolerance, providing excellent protection against inductive spikes.
The ESH2PDHE3/84A is a step-recovery diode, in which the voltage drop of the p-type junction from blocking to conducting is substantially instantaneously reversed. It is comprised of a reverse-biased PN-junction diode, with two capacitors connected on the two opposite terminals. When voltage is applied, the capacitors charge and the junction reaches the reverse breakdown voltage, resulting in an instant turn-on. When the voltage is removed, the junction recovers to its original, forward-bias mode.
The ESH2PDHE3/84A is designed for use in applications requiring high speed and repeatability, such as power supplies, voltage multipliers, switch-mode converters, switching regulators, and switching rectifiers. Its features enable it to be used in a wide range of applications, especially in high frequency or high current switching applications.
The ESH2PDHE3/84A is available in a variety of package sizes, with both axial and surface mount types providing options for different applications. The device provides both high di/dt response and dv/dt immunity, making it suitable for applications requiring continuous and stable operation at high frequencies and low currents.
The working principle behind the ESH2PDHE3/84A diode is to reduce the peak current and convert AC to DC, allowing for easier monitoring and regulation of voltage. Since this device is a step-recovery diode, when voltage is applied, the capacitors charge and the p-type junction reaches reverse breakdown voltage, resulting in an instant turn-on. When the voltage is removed, the junction recovers to its original, forward-bias mode. This allows rapid switching of the device, thus increasing its efficiency. The integrated body design of the diode also aids in its low-noise switching capabilities, making it suitable for a number of applications.
The ESH2PDHE3/84A single diode rectifier is suitable for a variety of applications due to its wide range of features. It is an ideal choice for use in power supplies, voltage multipliers, switch-mode converters, switching regulators, and switching rectifiers, as its high di/dt response and dv/dt immunity make it suitable for use in applications requiring continuous and stable operation at high frequencies and low currents. Its internal structure and integrated body design also provide improved switching noise immunity, making it an excellent choice for applications requiring high speed and repeatability.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| ESH2BHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH2BA M2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| ESH226M500AL4AA | KEMET | 0.69 $ | 2694 | CAP ALUM 22UF 20% 500V TH... |
| ESH2DHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2DHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH227M025AG3AA | KEMET | 0.15 $ | 1956 | CAP ALUM 220UF 20% 25V RA... |
| ESH2C-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH225M050AC3AA | KEMET | 0.09 $ | 8912 | CAP ALUM 2.2UF 20% 50V RA... |
| ESH2PCHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH228M050AN2AA | KEMET | 0.33 $ | 1000 | CAP ALUM 2200UF 20% 50V R... |
| ESH2PD-E3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2DHE3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2PB-M3/84A | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH228M025AM7AA | KEMET | 0.44 $ | 3098 | CAP ALUM 2200UF 20% 25V R... |
| ESH2PC-E3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2C-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2PCHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH228M035AM7AA | KEMET | 0.51 $ | 1426 | CAP ALUM 2200UF 20% 35V R... |
| ESH2BHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH2CA R3G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| ESH2PDHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2PDHM3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2PCHM3/84A | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2C-M3/52T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2BA R3G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| ESH226M035AC3AA | KEMET | 0.1 $ | 5570 | CAP ALUM 22UF 20% 35V RAD... |
| ESH2C M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2D M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2PC-M3/85A | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH226M016AC3AA | KEMET | 0.09 $ | 2286 | CAP ALUM 22UF 20% 16V RAD... |
| ESH2B-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH2PB-E3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH225M450AH1AA | KEMET | 0.21 $ | 7505 | CAP ALUM 2.2UF 20% 450V R... |
| ESH2BHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH2CHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2CHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2CHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2PBHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| ESH2B-M3/52T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
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ESH2PDHE3/84A Datasheet/PDF