ESH2C-E3/52T Allicdata Electronics
Allicdata Part #:

ESH2C-E3/52T-ND

Manufacturer Part#:

ESH2C-E3/52T

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 150V 2A DO214AA
More Detail: Diode Standard 150V 2A Surface Mount DO-214AA (SMB...
DataSheet: ESH2C-E3/52T datasheetESH2C-E3/52T Datasheet/PDF
Quantity: 1000
1 +: $ 0.11000
10 +: $ 0.10670
100 +: $ 0.10450
1000 +: $ 0.10230
10000 +: $ 0.09900
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: ESH2C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are essential components of power supplies and other electrical circuits and has a wide range of useful applications. The ESH2C-E3/52T rectifier is a single device designed for special applications. Its main use is for small, discrete power supply for electric current.

This diode is primarily based on Si, and it is a Germanium diode with base material of an absorptive layer. The maximum forward current is 52A with a 30A average with a voltage of 200V. It has a maximum reverse voltage of 400V, with a recovery time of 1.8e-005 seconds. The junction temperature can range from -55C to +150C. Overall, it is a reliable device that provides sure start-up and low-temperature spike protection.

The ESH2C-E3/52T is suitable for use in AC/DC converters, voltage detectors, power rectifiers, and even LED lighting applications. Because of its small size and heat dissipation capabilities, it also works well in circuit boards in microelectronics and power systems, and low-power grid designs.

The main feature of this device is its working principle. It has a structure that combines thyristor and diode elements into a single semiconductor device. When connected in the circuit, the diode portion of the device allows current to flow through and in the reverse direction. However, the thyristor, which acts as a gate, will close the connection if it senses any over-voltage. This means that the device can protect any other components in the system from any voltage surge.

The ESH2C-E3/52T diode is also a good choice for applications that require a high accuracy or need a fast or accurate response. It has a low forward voltage drop, meaning the losses created by the device can be kept to a minimum. The fast turn-off capabilities ensure that large surges can be dealt with quickly and prevent any damage to the circuit.

Overall, the ESH2C-E3/52T is a powerful and reliable device perfect for a variety of different applications. Its working principle allows it to protect other components in a circuit or system, while its small size and fast-acting response make it ideal for applications where accuracy and response time are important.

The specific data is subject to PDF, and the above content is for reference

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