
Allicdata Part #: | ESH2C-E3/52T-ND |
Manufacturer Part#: |
ESH2C-E3/52T |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 150V 2A DO214AA |
More Detail: | Diode Standard 150V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.11000 |
10 +: | $ 0.10670 |
100 +: | $ 0.10450 |
1000 +: | $ 0.10230 |
10000 +: | $ 0.09900 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 930mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 2µA @ 150V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | ESH2C |
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Diodes are essential components of power supplies and other electrical circuits and has a wide range of useful applications. The ESH2C-E3/52T rectifier is a single device designed for special applications. Its main use is for small, discrete power supply for electric current.
This diode is primarily based on Si, and it is a Germanium diode with base material of an absorptive layer. The maximum forward current is 52A with a 30A average with a voltage of 200V. It has a maximum reverse voltage of 400V, with a recovery time of 1.8e-005 seconds. The junction temperature can range from -55C to +150C. Overall, it is a reliable device that provides sure start-up and low-temperature spike protection.
The ESH2C-E3/52T is suitable for use in AC/DC converters, voltage detectors, power rectifiers, and even LED lighting applications. Because of its small size and heat dissipation capabilities, it also works well in circuit boards in microelectronics and power systems, and low-power grid designs.
The main feature of this device is its working principle. It has a structure that combines thyristor and diode elements into a single semiconductor device. When connected in the circuit, the diode portion of the device allows current to flow through and in the reverse direction. However, the thyristor, which acts as a gate, will close the connection if it senses any over-voltage. This means that the device can protect any other components in the system from any voltage surge.
The ESH2C-E3/52T diode is also a good choice for applications that require a high accuracy or need a fast or accurate response. It has a low forward voltage drop, meaning the losses created by the device can be kept to a minimum. The fast turn-off capabilities ensure that large surges can be dealt with quickly and prevent any damage to the circuit.
Overall, the ESH2C-E3/52T is a powerful and reliable device perfect for a variety of different applications. Its working principle allows it to protect other components in a circuit or system, while its small size and fast-acting response make it ideal for applications where accuracy and response time are important.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ESH2CHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH227M050AH2AA | KEMET | 0.23 $ | 1977 | CAP ALUM 220UF 20% 50V RA... |
ESH2DHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PD-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2DHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PCHM3/84A | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2C-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PCHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH228M035AM7AA | KEMET | 0.51 $ | 1426 | CAP ALUM 2200UF 20% 35V R... |
ESH2DA M2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ESH2D R5G | Taiwan Semic... | 0.1 $ | 850 | DIODE GEN PURP 200V 2A DO... |
ESH2D-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH227M025AG3AA | KEMET | 0.15 $ | 1956 | CAP ALUM 220UF 20% 25V RA... |
ESH2PC-E3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PDHM3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PBHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2PD-M3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH225M400AG3AA | KEMET | 0.16 $ | 6596 | CAP ALUM 2.2UF 20% 400V R... |
ESH2B-M3/52T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2PDHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PC-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PCHM3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH228M050AM3AA | KEMET | 0.64 $ | 2100 | CAP ALUM 2200UF 20% 50V T... |
ESH2CHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PBHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2CHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PCHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH228M050AN2AA | KEMET | 0.33 $ | 1000 | CAP ALUM 2200UF 20% 50V R... |
ESH2PD-E3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PDHM3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PD-M3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PBHM3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2CHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PB-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH227M050AH1AA | KEMET | 0.25 $ | 8027 | CAP ALUM 220UF 20% 50V RA... |
ESH227M010AE3AA | KEMET | 0.1 $ | 5354 | CAP ALUM 220UF 20% 10V RA... |
ESH2C-M3/52T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2B-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2C-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
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