FCH47N60 Allicdata Electronics
Allicdata Part #:

FCH47N60-ND

Manufacturer Part#:

FCH47N60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 47A TO-247
More Detail: N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-...
DataSheet: FCH47N60 datasheetFCH47N60 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Base Part Number: FCH47N60
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
Vgs (Max): ±30V
Series: SuperFET™
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FCH47N60 is a Field-Effect Transistor (FET) that operates on a single voltage power source. The FCH47N60 is a silicon-based N-Channel MOSFET that is specifically designed for high-side switching applications. This type of FET is commonly used in power supplies, motor control circuits, motor inverters, DC-to-DC converters, low-side switches, protection circuits, and output stages. As an N-Channel device, it requires the use of a dedicated gate in order to control the current flow.

The FCH47N60 is capable of operating at up to +600V voltages and has a maximum drain current of 60A. Its drain-source breakdown voltage is specified at 600V and its drain-source ON resistance is 28mΩ at 10V. The FCH47N60 also features a maximum gate-source voltage of +20V and a maximum gate-source capacitance of 45pF. The FCH47N60 is available in both TO-220 and TO-252 packages, which makes it suitable for a wide range of applications.

The FCH47N60 is primarily used as an application-specific power switch for most high-side active-load current demands. Since this type of device is specifically designed for high-side switching, it is capable of providing reliable protection from short-circuits, over-currents, and other current-related influences. This type of FET is easy to use and does not require special consideration when it comes to layout. It can also handle higher power levels than other comparable devices.

The FCH47N60’s working principle is based on the MOSFET technology. This type of transistor works by using an electric field to control the flow of current between the drain and the source terminals. When an electric field of correct magnitude is applied to the gate, the current between the drain and the source is controlled.This type of electronics is highly efficient, since the current flowing between the drain and the source is relatively low, even at high-power levels.

The FCH47N60 is an excellent choice for applications that require a single voltage power source. Its MOSFET technology ensures that it can handle high power levels without compromising on efficiency. Its TO-220 and TO-252 packages make it easy to install, and its wide range of voltage ratings makes it suitable for a variety of applications. The FCH47N60 is a reliable and cost-effective power switch, and it provides excellent protection from current-related influences.

The specific data is subject to PDF, and the above content is for reference

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