
Allicdata Part #: | FCH47N60N-ND |
Manufacturer Part#: |
FCH47N60N |
Price: | $ 11.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 47A TO-247 |
More Detail: | N-Channel 600V 47A (Tc) 368W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 450 |
1 +: | $ 11.25000 |
10 +: | $ 10.91250 |
100 +: | $ 10.68750 |
1000 +: | $ 10.46250 |
10000 +: | $ 10.12500 |
Gate Charge (Qg) (Max) @ Vgs: | 151nC @ 10V |
Base Part Number: | FCH47N60 |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 368W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6700pF @ 100V |
Vgs (Max): | ±30V |
Series: | SupreMOS™ |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Rds On (Max) @ Id, Vgs: | 62 mOhm @ 23.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCH47N60N is a N-channel enhancement mode MOSFET designed for use in consumer and industrial applications. It is manufactured by the Fairchild Semiconductor Corporation, a company that produces and sells semiconductor products and services, including application-specific integrated circuits, SMT circuit elements and discrete power transistors. The FCH47N60N is a Field-Effect Transistor (FET) built in an TO-247 style package.
The FCH47N60N has a very high threshold voltage, making it suitable for use in applications that require high voltage switching and excellent power efficiency. It is also ideal for use in applications that require fast recovery and low drain-source on-resistance to maintain high switching frequency and efficiency. Additionally, this MOSFET features a fast body diode recovery time and minimum driver turn-on time, making it suitable for use in applications that require low switching losses.
The FCH47N60N\'s operating temperature range is -55°C to 175°C and its drain source breakdown voltage is 47V. It is also rated to handle a Drain-Source Voltage of up to 175V with a Gate-Source Voltage of ±20V. Its drain current is rated up to 85A, with a continuous drain current of up to 40A. It has an on-resistance of 0.4 Ohms and a package body size of 245mil x 63mil x 295mil.
The working principle behind the FCH47N60N is one of the most widely used principles in the semiconductor industry, known as a MOSFET-based gate control system. A MOSFET is an insulated gate bipolar transistor (IGBT) that can act as an amplifier or a switch. When the voltage applied across its gate terminal is increased, it behaves like an amplifier, allowing current to flow between the drain and source terminals. However, when the applied voltage is decreased, the MOSFET behaves like a switch and blocks current from flowing. This behavior allows the FCH47N60N to be used in a variety of applications, as it can be used as an amplifier or switch in high frequency circuits, current supply and motor control devices, and in other applications that require a large current capacity with minimum losses.
The FCH47N60N is typically used in applications that require minimum switching losses, high frequency, and low input and output power. The device is also used in applications that require high current transfer, such as motors and lighting systems. The MOSFET’s high threshold voltage, low switching losses, and low drain-source resistance make it ideal for applications such as switched-mode power supplies, static relays, automotive power inverters, and battery management systems. It is also widely used in consumer electronics and industrial control systems.
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