Allicdata Part #: | FCH47N60NF-ND |
Manufacturer Part#: |
FCH47N60NF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 45.8A TO-247 |
More Detail: | N-Channel 600V 45.8A (Tc) 368W (Tc) Through Hole T... |
DataSheet: | FCH47N60NF Datasheet/PDF |
Quantity: | 450 |
Gate Charge (Qg) (Max) @ Vgs: | 157nC @ 10V |
Base Part Number: | FCH47N60 |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 368W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6120pF @ 100V |
Vgs (Max): | ±30V |
Series: | SupreMOS™ |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 23.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 45.8A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCH47N60NF is a n-channel NexFET MOSFET that can be used for a variety of applications. Its features, such as low RDS(on) and low gate charge, give it a competitive advantage over other power MOSFETs. It is suitable for high-frequency switching applications and its main application field is DC-DC conversion.
The FCH47N60NF is an innovative MOSFET that is specifically designed for power integrated circuits (ICs) and power modules. It is commonly used as a power MOSFET in electronic devices and offers high current capability, high speed performance, and efficient thermal dissipation. The low RDS(on) of the FCH47N60NF makes it an ideal choice for power supply applications that require low current consumption, as well as for power conversion and control. Furthermore, it features a patented dual-mode constant voltage feature which enables it to regulate the output voltage of a device over a wide voltage range.
The working principle of the FCH47N60NF is similar to that of other n-channel MOSFETs. A voltage is applied to the gate of the FET, which creates an electric field. The electric field attracts majority charge carriers, in this case electrons, to the gate and away from the source terminal. This process creates a voltage drop between the source and drain, and causes a current to flow through the FET. The FET acts as a switch that can be used to regulate the current in a circuit.
The FCH47N60NF is a versatile component that can be used in a variety of circuits, ranging from simple on/off switching applications to more complex high power and high-frequency switching applications. It features low on-state resistance and high-speed switching operation, making it ideal for use in power converters, DC-DC converters, and other high power applications. Furthermore, its dual-mode constant voltage feature allows it to regulate the output voltage of a device over a wide voltage range.
Overall, the FCH47N60NF is a powerful and efficient MOSFET that can be used for a variety of applications. Its features, such as low RDS(on) and low gate charge, combined with its versatility and ease of use, make it a great option for high power and high-frequency switching applications. Its versatile design and ability to regulate the output voltage of a device over a wide voltage range make it an ideal choice for use in a variety of power supply applications.
The specific data is subject to PDF, and the above content is for reference
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