FCH47N60F-F133

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FCH47N60F-F133 is a high-voltage fast-switching field-effect transistor (FET) that has been developed specifically for high-frequency switching applications in the decimeter-band (1 to 10GHz). It is suitable for use in consumer electronics and telecom systems. The FCH47N60F-F133 is an N-channel FET, with a built-in drain-gate capacitance. It has a breakdown voltage of 700 V and can operate at frequencies up to 10GHz.

Features

The FCH47N60F-F133 has a number of features that make it suitable for high-frequency, high-voltage applications. These include:

• High voltage operation: The FCH47N60F-F133 can handle up to 700 V of drain-source voltage.
• High frequency response: The FCH47N60F-F133 has a maximum frequency of operation of up to 10GHz.
• Low gate-source capacitance: The FCH47N60F-F133 has a built-in drain-gate capacitance of ≤1 pF, which makes it suitable for high-speed switching.
• Low ON resistance: The FCH47N60F-F133 has an ON resistance of only 0.5Ω.
• High-voltage avalanche capability: The FCH47N60F-F133 has high-voltage avalanche capability, which allows it to handle high-voltage, high-frequency signals.
• Longer life: The FCH47N60F-F133 has a long lifetime and is suitable for applications where long service life is required.

Working Principle

The FCH47N60F-F133 works on the principle of a field-effect transistor (FET). It is an N-channel device, meaning that the source is connected to its own terminal, the drain is connected to its own terminal and the gate is connected to its own terminal. When a voltage is applied to the gate-source of a FET, the current starts flowing through the channel between the source and drain. This current flow is known as the channel current. The channel current is then modulated by varying the voltage applied to the gate-source.

The FCH47N60F-F133 has a built-in drain-gate capacitance of ≤1 pF, which reduces the switching time of the device. The low gate-source capacitance also reduces the ringing (resonance) of the voltage at the switch, which is important for high-frequency applications. The low resistan

The specific data is subject to PDF, and the above content is for reference