Allicdata Part #: | FCH47N60F-ND |
Manufacturer Part#: |
FCH47N60F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 47A TO-247 |
More Detail: | N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-... |
DataSheet: | FCH47N60F Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
Base Part Number: | FCH47N60 |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 417W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8000pF @ 25V |
Vgs (Max): | ±30V |
Series: | SuperFET™ |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 73 mOhm @ 23.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FCH47N60F is one of the most commonly used metal-oxide-semiconductor field-effect transistors (MOSFETs) in power electronics applications. It is a 600V N-channel enhancement type MOSFET with maximum drain current (ID) of 47A, providing a power dissipation rate of 1200W and high dv/dt capability. It is designed to be used in high power switching applications, such as lighting and power supplies, and is also well suited for other applications such as audio amplifiers, alarm systems and motor driving. In this article, we will discuss the application field and working principle of FCH47N60F.
The FCH47N60F is a MOSFET type field-effect transistor which is used in a variety of applications from switching to amplifiers and other high-power devices. The device is capable of operating on voltages of up to 600V and a dissipation of up to 1200W. It is also capable of withstanding high dv/dt rates. The device also has an extremely low on-resistance, which allows it to switch quickly and efficiently. This makes it ideal for applications such as lighting, power supplies, audio amplifiers, alarms systems and motor control.
The FCH47N60F is designed to be used in applications that require high current switching and on-state resistance. It is designed to be driven by a logic-level signal which will turn the device on and off quickly. The device is also able to tolerate drain-source voltages up to 600V with continous drain current up to 47A and peak drain current up to 70A. In addition, it is capable of withstanding inversion mode breakdown voltages of 170V.
In terms of its working principle, the FCH47N60F is a voltage-controlled device that relies on the application of a gate voltage to control the current flow between the source and the drain terminals. When a small voltage is applied to the gate, the DIBL (Drain Induced Barrier Lowering) effect causes the threshold voltage to drop, allowing an increase in current from the source to the drain. This current flow is then further controlled by the applied gate voltage, allowing the user to control the level of current flowing in the device.
The FCH47N60F is designed to operate as a switch, amplifier, or as a constant current and voltage regulator. When used as a switch, the user can control the current flow between the source and the drain through the application of a gate voltage. This is especially useful in applications such as lighting and power supplies where the user needs to control the current flow. When used as an amplifier, the device can be used to amplify an incoming signal. Finally, the device can also be used as a voltage and current regulator, providing consistent voltage and current levels to a load.
In conclusion, the FCH47N60F is a highly versatile MOSFET designed for high power switching and on-state resistance applications. It is capable of operating on voltages up to 600V and current up to 47A, and is especially useful for applications such as lighting, audio amplifiers, alarms systems, and motor controls due to its low on-resistance and high dv/dt capability. In terms of its working principle, the FCH47N60F operates on the principle of a voltage-controlled device whose current flow is controlled by the application of a gate voltage.
The specific data is subject to PDF, and the above content is for reference
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FCH47N60 | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 47A TO-2... |
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