
FDG312P Discrete Semiconductor Products |
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Allicdata Part #: | FDG312PTR-ND |
Manufacturer Part#: |
FDG312P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 1.2A SC70-6 |
More Detail: | P-Channel 20V 1.2A (Ta) 750mW (Ta) Surface Mount S... |
DataSheet: | ![]() |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 750mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 1.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDG312P is a widely used FET (field effect transistor) that comes in a variety of packages, including the SOP version. It can be used in a variety of applications and is often preferred to other models due to its lower cost and availability. The FDG312P is usually listed as a digital switch or transistor and is most commonly found in consumer applications.
A field effect transistor (FET) is a transistor that has a control gate. This gate allows a control current or voltage to control the device. Depending on the type of FET, either current will control the device, or voltage will control the device. The FDG312P is a MOSFET (metal oxide semiconductor FET) and is usually used in an enhancement mode; this means that by applying a positive gate voltage, the drain-source current will increase.
The FDG312P is a single FET with three main terminals: the source, drain, and the gate. The source is considered to be the negative terminal and is connected to the negative supply, while the drain is considered to be the positive terminal and is connected to the positive supply. The middle terminal, the gate, is considered to be the control terminal; this is where the control voltage or current is applied to control the device. The device will usually be biased in the enhancement state, and the source-drain current is usually dependent on the size of the gate voltage.
The FDG312P is used in a variety of applications such as digital switching, motor drives, amplifiers, and low voltage controllers. It is commonly used as a switch to control the flow of current. It can be used in circuits where a low amount of current needs to be controlled, or when the speed of the circuit needs to be changed quickly. It can also be used in amplifying applications where high current needs to be controlled.
The FDG312P has a wide range of working voltages; ranging from 5 volts to 50 volts. It can also handle currents up to 15A and has a power dissipation of 250mW. The maximum capacitance between the source and gate is 7.2pF and between the drain and gate is 3.1nF. It is designed to operate up to 150°C and is also designed to operate in either the forward or reverse bias configuration.
The FDG312P is a widely used FET that is used in various applications. It is affordable, and has a wide operating range which makes it ideal for a variety of applications. Because of its easy to use bias configuration and its use of enhancement mode, it is a popular transistor for digital switching, motor drives, amplifiers, and low voltage controllers.
The specific data is subject to PDF, and the above content is for reference
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