FDG312P Allicdata Electronics

FDG312P Discrete Semiconductor Products

Allicdata Part #:

FDG312PTR-ND

Manufacturer Part#:

FDG312P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 1.2A SC70-6
More Detail: P-Channel 20V 1.2A (Ta) 750mW (Ta) Surface Mount S...
DataSheet: FDG312P datasheetFDG312P Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDG312P is a widely used FET (field effect transistor) that comes in a variety of packages, including the SOP version. It can be used in a variety of applications and is often preferred to other models due to its lower cost and availability. The FDG312P is usually listed as a digital switch or transistor and is most commonly found in consumer applications.

A field effect transistor (FET) is a transistor that has a control gate. This gate allows a control current or voltage to control the device. Depending on the type of FET, either current will control the device, or voltage will control the device. The FDG312P is a MOSFET (metal oxide semiconductor FET) and is usually used in an enhancement mode; this means that by applying a positive gate voltage, the drain-source current will increase.

The FDG312P is a single FET with three main terminals: the source, drain, and the gate. The source is considered to be the negative terminal and is connected to the negative supply, while the drain is considered to be the positive terminal and is connected to the positive supply. The middle terminal, the gate, is considered to be the control terminal; this is where the control voltage or current is applied to control the device. The device will usually be biased in the enhancement state, and the source-drain current is usually dependent on the size of the gate voltage.

The FDG312P is used in a variety of applications such as digital switching, motor drives, amplifiers, and low voltage controllers. It is commonly used as a switch to control the flow of current. It can be used in circuits where a low amount of current needs to be controlled, or when the speed of the circuit needs to be changed quickly. It can also be used in amplifying applications where high current needs to be controlled.

The FDG312P has a wide range of working voltages; ranging from 5 volts to 50 volts. It can also handle currents up to 15A and has a power dissipation of 250mW. The maximum capacitance between the source and gate is 7.2pF and between the drain and gate is 3.1nF. It is designed to operate up to 150°C and is also designed to operate in either the forward or reverse bias configuration.

The FDG312P is a widely used FET that is used in various applications. It is affordable, and has a wide operating range which makes it ideal for a variety of applications. Because of its easy to use bias configuration and its use of enhancement mode, it is a popular transistor for digital switching, motor drives, amplifiers, and low voltage controllers.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDG3" Included word is 15
Part Number Manufacturer Price Quantity Description
FDG326P ON Semicondu... -- 1000 MOSFET P-CH 20V 1.5A SC70...
FDG327NZ ON Semicondu... -- 1000 MOSFET N-CH 20V 1.5A SC70...
FDG330P ON Semicondu... -- 3000 MOSFET P-CH 12V 2A SC70-6...
FDG313N_D87Z ON Semicondu... 0.0 $ 1000 MOSFET N-CH 25V 0.95A SC7...
FDG332PZ ON Semicondu... -- 3000 MOSFET P-CH 20V 2.6A SC70...
FDG361N ON Semicondu... -- 1000 MOSFET N-CH 100V 0.6A SC7...
FDG329N ON Semicondu... -- 1000 MOSFET N-CH 20V 1.5A SC70...
FDG312P ON Semicondu... -- 3000 MOSFET P-CH 20V 1.2A SC70...
FDG311N ON Semicondu... -- 3000 MOSFET N-CH 20V 1.9A SC70...
FDG313N ON Semicondu... -- 1000 MOSFET N-CH 25V 0.95A SC7...
FDG315N ON Semicondu... -- 1000 MOSFET N-CH 30V 2A SC70-6...
FDG314P ON Semicondu... -- 1000 MOSFET P-CH 25V 0.65A SC7...
FDG316P ON Semicondu... -- 1000 MOSFET P-CH 30V 1.6A SC70...
FDG327N ON Semicondu... -- 1000 MOSFET N-CH 20V 1.5A SC70...
FDG328P ON Semicondu... -- 1000 MOSFET P-CH 20V 1.5A SC70...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics