
FDG328P Discrete Semiconductor Products |
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Allicdata Part #: | FDG328PFSTR-ND |
Manufacturer Part#: |
FDG328P |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 1.5A SC70-6 |
More Detail: | P-Channel 20V 1.5A (Ta) 750mW (Ta) Surface Mount S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.18000 |
10 +: | $ 0.17460 |
100 +: | $ 0.17100 |
1000 +: | $ 0.16740 |
10000 +: | $ 0.16200 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 750mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 337pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 145 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
The FDG328P is a high voltage complementary Metal-Oxide-Silicon Field-Effect Transistor (MOSFET) with a single effect. This excellent device offers industry-leading performance, wide operating temperature range and superior reliability. It has superior voltage and current rating as compared to other MOSFETs and enables higher efficiency in power conversion than conventional MOSFETs.
Application Field
The FDG328P can be used in a variety of applications. Its typical applications include switching and amplifier power systems, low dropout linear circuits, motion control and current sensing applications. In automotive and industrial electronic systems, it can be used for motor control, linear regulation and high-voltage switching applications. Due to its high VGS threshold voltage, the FDG328P can be used in high voltage gate drivers, motor control applications, DC/DC converters, AC-DC drivers and many other circuit designs.
Working Principle
The FDG328P is a depletion type MOSFET. It is composed of an N-channel depletion-mode MOSFET and a P-channel depletion-mode MOSFET. To operate the FDG328P, the body of the device must be grounded. Then, a voltage applied to the gate of the device will control the current flowing through the device. The depletion-mode MOSFETs as used in the FDG328P allow operation with a negative gate-source voltage (VGS).
The FDG328P is a three-terminal device. When the voltage of either terminal is negative, the FDG328P will turn on and the current flows through the drain and the source. The voltage applied on the gate terminal will control the current and the voltage across the drain and source. The on-resistance of the FDG328P is relatively low, thus allowing for higher currents in applications such as motor control, linear regulation and high-voltage switching.
Conclusion
The FDG328P is an excellent complementary Metal-Oxide-Silicon Field-Effect Transistor (MOSFET) with a single effect. Its wide operating temperature range, superior voltage and current rating, and low on-resistance enable it to be used in a variety of applications. These applications include switching and amplifier power systems, low dropout linear circuits, motion control, current sensing, motor control, high-voltage switching, DC/DC converters and AC-DC drivers. The FDG328P is composed of an N-channel depletion-mode MOSFET and a P-channel depletion-mode MOSFET which works with a negative gate-source voltage for operation.
The specific data is subject to PDF, and the above content is for reference
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