FDG314P Allicdata Electronics
Allicdata Part #:

FDG314P-ND

Manufacturer Part#:

FDG314P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 25V 0.65A SC70-6
More Detail: P-Channel 25V 650mA (Ta) 750mW (Ta) Surface Mount ...
DataSheet: FDG314P datasheetFDG314P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDG314P is a single gate enhancement mode metal-oxide-semiconductorfield-effect transistor (MOSFET) in a very small package, which is why it is a popular component in modern electronics. It is particularly popular in high-frequency, low-power applications, where space is limited.

The FDG314P is essentially a very small insulated gate transistor, which provides a two-level, low to high impedance switch. The FDG314P is a surface mount device and is widely used in mobile phones and devices that have a need for lightweight components due to the compact size of the component.

The FDG314P can be used in a variety of applications, it is often used where high frequency switching needs to be utilized, such as in switching power supplies, logic gates, and for motor control. Additionally, it is also commonly used in high-frequency, low-power applications such as closed-loop systems, analog signal processing, and for voltage and current sensing capabilities.

FDG314P is a form of a field-effect transistor, and its operation is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) principle. The FDG314P consists of an insulation layer and two layers of metal electrodes, which are located on either side of the insulator. The two metal layers, known as the gate and the source, are connected and act as a voltage controlled switch. When a positive voltage is applied to the gate, the current between the source and the drain increases, allowing current to flow freely through the MOSFET.

The gate voltage controls the amount of current flowing through the device, by controlling the resistance of the channel between the source and the drain. The amount of current which is allowed to flow through the device depends on the amount of voltage applied to the gate. It is important to note that the FDG314P does not absorb any energy; instead, it works using P-channelMOSFET devices, which merely control the flow of current.

The FDG314P has a wide range of applications in many different industries. Its ability to switch quickly, respond to changes in voltage, and handle high-frequency switching with low power make it an ideal choice for devices such as portable radios, cellular phones, and electronic toys. The FDG314P is also popular in the automotive industry, as it is used in ignition systems, electric power steering systems and fuel injection systems. Furthermore, the FDG314P is also commonly used by the aerospace industry in applications such as radar systems and navigation systems.

The FDG314P is a highly versatile component and has many applications. It is an ideal choice for a wide range of electronic devices, and it continues to be a popular choice for manufacturers due to its excellent performance and reliability. The FDG314P offers a wide range of applications and can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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