Allicdata Part #: | FDG314P-ND |
Manufacturer Part#: |
FDG314P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 25V 0.65A SC70-6 |
More Detail: | P-Channel 25V 650mA (Ta) 750mW (Ta) Surface Mount ... |
DataSheet: | FDG314P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 750mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 63pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 650mA (Ta) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDG314P is a single gate enhancement mode metal-oxide-semiconductorfield-effect transistor (MOSFET) in a very small package, which is why it is a popular component in modern electronics. It is particularly popular in high-frequency, low-power applications, where space is limited.
The FDG314P is essentially a very small insulated gate transistor, which provides a two-level, low to high impedance switch. The FDG314P is a surface mount device and is widely used in mobile phones and devices that have a need for lightweight components due to the compact size of the component.
The FDG314P can be used in a variety of applications, it is often used where high frequency switching needs to be utilized, such as in switching power supplies, logic gates, and for motor control. Additionally, it is also commonly used in high-frequency, low-power applications such as closed-loop systems, analog signal processing, and for voltage and current sensing capabilities.
FDG314P is a form of a field-effect transistor, and its operation is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) principle. The FDG314P consists of an insulation layer and two layers of metal electrodes, which are located on either side of the insulator. The two metal layers, known as the gate and the source, are connected and act as a voltage controlled switch. When a positive voltage is applied to the gate, the current between the source and the drain increases, allowing current to flow freely through the MOSFET.
The gate voltage controls the amount of current flowing through the device, by controlling the resistance of the channel between the source and the drain. The amount of current which is allowed to flow through the device depends on the amount of voltage applied to the gate. It is important to note that the FDG314P does not absorb any energy; instead, it works using P-channelMOSFET devices, which merely control the flow of current.
The FDG314P has a wide range of applications in many different industries. Its ability to switch quickly, respond to changes in voltage, and handle high-frequency switching with low power make it an ideal choice for devices such as portable radios, cellular phones, and electronic toys. The FDG314P is also popular in the automotive industry, as it is used in ignition systems, electric power steering systems and fuel injection systems. Furthermore, the FDG314P is also commonly used by the aerospace industry in applications such as radar systems and navigation systems.
The FDG314P is a highly versatile component and has many applications. It is an ideal choice for a wide range of electronic devices, and it continues to be a popular choice for manufacturers due to its excellent performance and reliability. The FDG314P offers a wide range of applications and can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDG314P | ON Semicondu... | -- | 1000 | MOSFET P-CH 25V 0.65A SC7... |
FDG329N | ON Semicondu... | -- | 1000 | MOSFET N-CH 20V 1.5A SC70... |
FDG361N | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 0.6A SC7... |
FDG313N_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 25V 0.95A SC7... |
FDG326P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 1.5A SC70... |
FDG312P | ON Semicondu... | -- | 3000 | MOSFET P-CH 20V 1.2A SC70... |
FDG315N | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 2A SC70-6... |
FDG328P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 1.5A SC70... |
FDG311N | ON Semicondu... | -- | 3000 | MOSFET N-CH 20V 1.9A SC70... |
FDG327NZ | ON Semicondu... | -- | 1000 | MOSFET N-CH 20V 1.5A SC70... |
FDG313N | ON Semicondu... | -- | 1000 | MOSFET N-CH 25V 0.95A SC7... |
FDG327N | ON Semicondu... | -- | 1000 | MOSFET N-CH 20V 1.5A SC70... |
FDG330P | ON Semicondu... | -- | 3000 | MOSFET P-CH 12V 2A SC70-6... |
FDG316P | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 1.6A SC70... |
FDG332PZ | ON Semicondu... | -- | 3000 | MOSFET P-CH 20V 2.6A SC70... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...