FDG361N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDG361N is a type of Field Effect Transistor (FET) that is widely used in various applications due to its low on-resistance, small package, and versatile input/output structures. This FET is a single, bipolar device that has two input terminals (the source and the gate) and one output terminal (the drain). It is capable of handling large voltages and currents due to its construction, and its high frequency characteristic further enhances its usefulness in certain applications.

The FDG361N works by using the principle of field effect. It is constructed using a metal Oxide Semiconductor (MOS) structure, with a metal gate and an insulating oxide layer. This oxide layer acts as a dielectric material, allowing an electric field to be created when a voltage is applied to it. This electric field creates a charge buildup in the oxide layer, which in turn creates a potential barrier in the form of an inversion layer on the metal gate-oxide interface.

The main benefit of a FET such as the FDG361N is that the extended gate area allows for better control over the charge carriers (electrons or holes) that pass through it, thereby allowing it to act as a dynamical switch. This switching action happens when the voltage that is applied to the gate is either increased or decreased, causing the number of charge carriers to either increase or decrease. This in turn allows the drain-to-source current to be controlled.

The FDG361N is most commonly used for switch and amplifier applications because of its low on-resistance, high input/output impedance, fast switching speed, and wide temperature operating range. Its small size also makes it ideal for very high frequencies and is often used in cell phone and other wireless communications. It is also used in low-power amplifiers, power supplies, and audio amplifiers.

In conclusion, the FDG361N is a versatile Field Effect Transistor (FET) that is used in a variety of applications due to its low on-resistance, small package size, and high frequency characteristics. Its innovative construction and versatile input/output structures allows it to be used for switch and amplifier applications, as well as in high-frequency communications and low-power audio amplifiers.

The specific data is subject to PDF, and the above content is for reference