FDG332PZ Allicdata Electronics

FDG332PZ Discrete Semiconductor Products

Allicdata Part #:

FDG332PZTR-ND

Manufacturer Part#:

FDG332PZ

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 2.6A SC70-6
More Detail: P-Channel 20V 2.6A (Ta) 750mW (Ta) Surface Mount S...
DataSheet: FDG332PZ datasheetFDG332PZ Datasheet/PDF
Quantity: 3000
1 +: $ 0.11000
10 +: $ 0.10670
100 +: $ 0.10450
1000 +: $ 0.10230
10000 +: $ 0.09900
Stock 3000Can Ship Immediately
$ 0.11
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDG332PZ is a high-speed, high efficiency power MOSFET device capable of handling up to 5 amps of current with up to 80 volts of voltage. It is widely used in various applications where power, speed, and efficiency are of great importance. This device offers excellent switching characteristics and can be used for a wide range of application fields.

The FDG332PZ is a part of the Vg Stripe family devices from FETs, MOSFETs and Single series. It is a logic level transistor and is able to switch at very high speeds of up to 500ns. It has very low charge and very low gate capacitance for switching at high frequencies. It has a low on state resistance for efficient conduction and high current carrying capacity.

The working principle of a MOSFET device is based on the use of an insulated gate. The insulated gate is charged with an electric field when a voltage is applied to the gate. This electric field creates a reverse electric field within the MOSFET. The reverse electric field causes the semiconductor material of the device to become conductive, allowing current to flow through the device. When the voltage applied to the gate is removed, the reverse electric field disappears and the device returns to its non-conductive, or off, state.

The FDG332PZ is primarily used in applications such as switch-mode power supplies (SMPS), AC-DC and DC-DC converters, inverters, motor and servo drive, charge pumps, and lighting controls. It is also popular for analog and digital ballast applications. The device is suitable for any switched mode power supply which requires high efficiency, rugged operation, and fast switching. It can be used in both linear and switching applications.

The FDG332PZ is available in an SO-8 package along with an evaluation kit. The evaluation kit includes samples of the device and the necessary components to evaluate the device. The kit also includes application notes and other resources to assist with the evaluation of the device. The kit is often used by professionals to develop new products.

The FDG332PZ can be used in both linear and switching circuits. The device has a fast switch time making it ideal for high frequency applications. It is able to handle up to 5A of current and 80V of voltage. It is designed to be a logic level MOSFET and is able to work correctly with both logic-level and low-voltage logic signals. The device also offers excellent switching characteristics and is suitable for a wide range of applications.

The FDG332PZ is a high-speed, high efficiency power MOSFET device that offers excellent performance in a variety of applications. It can be used in a wide range of applications, from switch-mode power supplies and lighting controls to analog and digital ballasts. The device is available in an SO-8 package and is equipped with a low on-state resistance for efficient conduction and high current carrying capacity. The device is suitable for any switched mode power supply which requires high efficiency, rugged operation, and fast switching.

The specific data is subject to PDF, and the above content is for reference

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