
Allicdata Part #: | FDI030N06-ND |
Manufacturer Part#: |
FDI030N06 |
Price: | $ 3.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 120A I2PAK |
More Detail: | N-Channel 60V 120A (Tc) 231W (Tc) Through Hole I2P... |
DataSheet: | ![]() |
Quantity: | 835 |
1 +: | $ 3.62250 |
10 +: | $ 3.23316 |
100 +: | $ 2.65110 |
500 +: | $ 2.14676 |
1000 +: | $ 1.81053 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 231W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9815pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 151nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FDI030N06 is a type of transistor that belongs to the family of field-effect transistors (FETs). It is a single device, meaning that it only contains one source and one drain. This type of transistor is typically used in applications such as power transistor switches, regulated power supplies, audio amplifiers, and more.
A FET is an electrical device that works using an electric field rather than a current, so it is considered an electronic switch. The FDI030N06, specifically, is a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of FET has various advantages, such as high-speed switching, low power consumption, and high-efficiency current delivery.
The FDI030N06 is composed of several elements, including the gate (G), which acts as the controlling input, the voltage source (Vsrc), the drain (D), and the source (S). The gate and drain are connected to each other, and the source is connected to the voltage source. The FDI030N06 also has a dielectric layer, often made of silicon oxide, between the gate and the channel, which acts as an insulator.
The working principle of the FDI030N06 is based on the mechanism of capacitance between the gate and the channel. When the voltage on the gate increases, it creates a strong electric field that attracts charge carriers to the area near the gate. This causes the current to flow through the channel, turning on the device and allowing the current to flow from source to the drain.
The primary advantage of the FDI030N06 is its high-speed switching. The device can switch between on and off states quickly, which makes it ideal for applications such as power transistors switches, regulated power supplies, audio amplifiers, and more. In addition, the FDI030N06 offers low on-resistance and low gate-charge, making it an excellent choice for high-current applications.
Another advantage of the FDI030N06 is its low power consumption. The FET can turn on and off with very low power consumption, providing efficient power delivery. This makes the FDI030N06 very attractive for use in high-efficiency applications such as mobile devices and other low-power applications.
Overall, the FDI030N06 is a versatile and reliable FET that is suitable for numerous high-speed switching, regulated power supply, and audio amplifier applications. It offers low on-resistance, low gate-charge, and low power consumption, making it an excellent choice for high-current, high-efficiency applications. Its advantages ensure that the FDI030N06 can perform to its full potential in any application.
The specific data is subject to PDF, and the above content is for reference
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