Allicdata Part #: | FDI045N10A-F102-ND |
Manufacturer Part#: |
FDI045N10A-F102 |
Price: | $ 3.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 120A I2PAK-3 |
More Detail: | N-Channel 100V 120A (Tc) 263W (Tc) Through Hole I2... |
DataSheet: | FDI045N10A-F102 Datasheet/PDF |
Quantity: | 240 |
1 +: | $ 3.04290 |
10 +: | $ 2.71719 |
100 +: | $ 2.22787 |
500 +: | $ 1.80401 |
1000 +: | $ 1.52145 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 263W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5270pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FDI045N10A-F102 is a type of Field Effect Transistor (FET). It is a power management unit that is typically used to control electrical signals in an array of different devices. FETs derives their name from the fact that they operate using a field of electrical charges, rather than a linear current like traditional transistors. These transistors have an advantage over other types in terms of their small size, low capacitance, and high switching speed. Additionally, FETs require relatively low voltages to operate, making them extremely efficient.
The FDI045N10A-F102 can be used in a variety of applications, including power management of DC motors, battery chargers, solar-powered devices, and other electronic circuits. It is also suitable for applications involving analog signal processing, as its low capacitance ensures that switching signals are transmitted at high speed. In addition, this type of FET is ideal for switching applications as it has a relatively low threshold voltage.
The FDI045N10A-F102 is a N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). In an N-channel FET, the flow of current is controlled by an electric field. Basically, the transistor has an oxide layer, which acts as a medium through which the current can pass freely. The flow of current can be controlled by varying the voltage across it. This is done by manipulating the gate of the MOSFET with signals, causing the electric field strength to increase or decrease, thereby enabling or disabling the current flow.
When a voltage is applied to the gate of the MOSFET, it initiates a flow of electrons in the oxide layer. The electrons flow from the source to the drain, which can be thought of as a pathway for the current flow. Depending on the voltage applied, different amounts of current can be achieved. The FDI045N10A- F102 transistor is usually operated by applying a voltage in the range of 1.2-1.8 V. This voltage is enough to turn the transistor on or off.
The FDI045N10A-F102 offers a number of benefits, including an efficient switching speed, low impedance and low voltage operation. Its relatively low threshold voltage makes it suitable for applications that involve switching or analog signal processing. Furthermore, the low capacitance of the device ensures that signals are transmitted at high speed. Considering these features, the FDI045N10A-F102 is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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