Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK (TO-262)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	231W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8235pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	133nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	4 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Overview

The FDI040N06 is a type of field effect transistor (FET). It is a type of MOSFET (metal–oxide–semiconductor field-effect transistor) that is designed for power applications. It is part of the N-channel enhancement-mode MOSFETs, a subset of MOSFETs that are used to switch power with low gate charge and a low on-state resistance. It is a small-signal device that has low capacitance.The FDI040N06 is made to operate in high-efficiency and high-temperature applications. It has a suitable thermal resistance and a temperature range of -55°C to 150°C (TJ). It is lead-free, RoHS compliant, and Halogen-free.

Application Field

The FDI040N06 is suitable for various applications in the field of power electronics. Examples include:

• Switch mode power supplies (SMPS)
• DC/DC converters
• On-board UPS systems
• Power factor correction (PFC)
• Solar inverters
• DC motor controllers
• LED lighting
• Power amplifiers
• E-cigarettes

The FDI040N06 is suitable for many applications in the automotive market, such as:

• Power door locks
• Rear window defrosters
• Power window motors
• Electric fuel pumps
• Battery chargers

In addition to these applications, the FDI040N06 can be used in other applications that require low on-state resistance and high efficiency, such as portable audio equipment, AC/DC adapters, and low-power lighting systems.

Working Principle

The FDI040N06 is a N-channel Enhancement-Mode MOSFET. These devices use a conducting channel between the source and drain when subjected to a voltage between the gate and the source. When the voltage at the gate is increased or decreased, the device changes its conductivity, allowing current to pass through it. When the voltage on the gate is above a threshold voltage (VGS(th)), the channel becomes conductive and the FET is in an "on" state. When the voltage is below the threshold, the channel is blocked and the FET is in an "off" state. This type of transistor operates in two modes: enhancement mode and depletion mode. When in enhancement mode, the channel between the source and the drain is in its off-state, and when in depletion mode, the channel is in its on-state. This makes the FDI040N06 more reliable, as it can switch between on and off states more quickly and reliably. The FDI040N06 has a low gate charge (Qg) and a low static drain-source off-state resistance (RDS(on)). The low gate charge and low RDS(on) values contribute to the device\'s higher efficiency.

Conclusion

The FDI040N06 is a type of N-channel enhancement-mode MOSFET, designed for power applications such as switch mode power supplies, DC/DC converters, and LED lighting. It is lead-free, RoHS compliant, and Halogen-free, making it suitable for use in high-temperature and high-efficiency applications. The FDI040N06 has a low gate charge and a low RDS(on), allowing it to switch between on and off states quickly and reliably. It is suitable for various automotive, audio, lighting, and e-cigarette applications.

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