
Allicdata Part #: | FDI045N10A-ND |
Manufacturer Part#: |
FDI045N10A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 120A I2PAK-3 |
More Detail: | N-Channel 100V 120A (Tc) 263W (Tc) Through Hole I2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 263W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5270pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FDI045N10A is a high-current p-channel Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET). It is a member of the N-Mosfet family of MOSFETs, which are also known as N-channel MOSFETs or just “n-mosfet”. It is designed to provide superior performance in a wide range of applications such as switching, amplifying, and driving high-current loads.
An FDI045N10A MOSFET has a number of different characteristics which make it suitable for different applications. It is designed to provide the highest level of current handling capability in the N-MOSFET family, making it an excellent choice for high-current switching and driving applications. The FDI045N10A also has a high voltage rating, which makes it suitable for applications that require a higher voltage than most other MOSFETs can provide. Finally, the FDI045N10A has a low on-state resistance, which helps to minimize losses in power applications.
The working principle of an FDI045N10A MOSFET is similar to that of most other MOSFETs. In a typical application, the MOSFET is connected to the power source and a control voltage is applied to the gate. When the control voltage exceeds the threshold voltage of the MOSFET, the channel is opened, allowing current to flow through the MOSFET. The drain-to-source current can then be regulated by controlling the gate voltage. When the control voltage is reduced, the channel closes, thereby turning off the MOSFET and preventing any further current flow.
The FDI045N10A is well suited for many different applications. One of the most common uses of this type of MOSFET is in power supply applications. For example, they can be used to regulate the output voltage of a DC power supply. In this application, an FDI045N10A MOSFET is connected between the power source and the desired output voltage. The gate voltage is then adjusted to regulate the output voltage. This type of MOSFET is also commonly used for applications that require high-power switching and driving, such as motor control, in which it is connected to the motor windings to control their current. In addition, the FDI045N10A can be used for high-voltage applications, such as those found in power grid switching and in the high-voltage lines of industrial machinery.
In conclusion, the FDI045N10A is a high-performance, low-on-state-resistance MOSFET that is well suited to a variety of applications. Its high current capability and high voltage rating make it an excellent choice for high-power switching and driving applications. In addition, its low on-state resistance helps to minimize power losses, making it a good choice for power supply and power grid applications. With its wide range of uses, the FDI045N10A is an indispensable part of any MOSFET enthusiast’s toolkit.
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