FDI047AN08A0

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FDI047AN08A0 is an enhancement-mode, N-channel silicon field-effect transistor (FET). It is available in the TO-220 package and is classified as a single-gate FET. The FET functions as a switch or a voltage amplifier between the gate and drain terminals.

This FET’s physical package consists of a case with three terminals. The terminals are referred to as the gate, drain, and source. The FET is basically a semiconductor device consisting of two p-type and n-type materials. A voltage or current applied to the gate terminal through an external gate terminal controls the gate-source voltage and enters into the channel of the FET between the drain and source.

The FDI047AN08A0 is an example of a device known as an Enhancement-Mode MOSFET. Enhancement-Mode MOSFETs are common in power control, signal switching, and signal conditioning applications. The FDI047AN08A0 can be used in applications such as switching DC loads, battery-powered circuits, amplifier stages, and audio amplifiers.

The function of this FET is relatively simple. By applying a positive potential to the gate, a potential difference is created between the gate and the source, enabling current to flow from the drain to the source. The amount of current that can flow between the drain and the source is directly proportional to the potential applied to the gate.

The FDI047AN08A0 has a maximum drain-to-source voltage (VDS) rating of 100 volts and a drain current (ID) rating of 16 amps. It also has a maximum drain-to-source on-state resistance of 5.5 ohms.

The FDI047AN08A0 is designed to be robust and reliable in harsh environments. It has a high operating temperature range of -55 to +150 degrees Celsius and excellent power dissipation and power cycling capabilities. It also has an extended VGS avalanche capability of 80V, ensuring exceptional mechanical and thermal stability even in the most extreme environmental conditions.

The FDI047AN08A0 also has a number of safety features to ensure reliable operation, including an electro-static discharge protection feature. This feature prevents a spark from occurring, even if the gate voltage exceeds a certain threshold and helps protect the device from damage.

In summary, the FDI047AN08A0 is a powerful and reliable MOSFET that is suitable for a wide range of applications and environments. Its robust and extended temperature range, combined with its low on-state resistance, makes it ideal for power control, signal switching, and signal conditioning applications.

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