FDMT800100DC Discrete Semiconductor Products

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The FDMT800100DC is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is exceptionally versatile and can be used for a variety of applications. This type of MOSFET is part of the larger category of FETs (Field Effect Transistors), which are used to amplify and switch electrical signals in a wide range of circuits. The FDMT800100DC, in particular, is single-channel N-type and can be operated in the switching, amplification, and level-shift mode. This makes it the perfect choice for applications in the communications, consumer, automotive, and industrial sectors.

The most prominent feature of the FDMT800100DC is its ultra-low on-resistance (RDS(on)) of 0.8 mΩ. This helps to conserve energy and reduce heat as it requires less energy to switch a load when compared to traditional MOSFETs. Likewise, the FDMT800100DC also has a low operating temperature (TJ max) of 175°C, aiding in its capabilities to improve the efficiency of the circuit it is used in.

The FDMT800100DC has a fast switching speed and operates up to 4 V, making it an ideal choice for for systems that require reliable operation at high loads and switching frequencies. The operation parameters for the device are as follows: VDSS of 30V, ID of 80A, Qg of 6nC and RDS(on)= 0.8mΩ. For the measured gate and drain-source voltages, the drain-source current was measured at a maximum of 8.5A and 8.3A respectively.

The FDMT800100DC has a variety of benefits that make it an ideal choice for applications that require a fast, efficient switch. It is relatively lightweight and can be easily mounted on the PCB. Additionally, it is also lead-free and halogen-free, making it an excellent option for applications that require RoHS compliance. In terms of its size, the FDMT800100DC has an approximate width of 9.3mm and height of 4.5mm.

The working principle of the FDMT800100DC is based on the basic characteristics of a MOSFET. The MOSFET consists of two regions, separated by a conductive layer of Oxide. The two regions are known as the drain and the source. When a voltage is applied to the gate, electrons can pass through the oxide layer and accumulate on the surface of the MOSFET. This creates an electric field from the gate to the source and drain. This electric field controls the conductance between the two regions and is used to control the flow of current between the source and drain.

The FDMT800100DC is an excellent item for applications that require a high-power, fast switching device. It is incredibly energy-efficient and reliable, making it a great choice for various systems. Its compatibility with a wide range of applications makes the FDMT800100DC a must-have for any engineer looking to enhance their designs with cutting-edge technology.

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