FDMT80060DC Discrete Semiconductor Products |
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Allicdata Part #: | FDMT80060DCTR-ND |
Manufacturer Part#: |
FDMT80060DC |
Price: | $ 1.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V |
More Detail: | N-Channel 60V 43A (Ta), 292A (Tc) 3.2W (Ta), 156W ... |
DataSheet: | FDMT80060DC Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.74129 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-Dual Cool™88 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 20170pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 238nC @ 10V |
Series: | Dual Cool™, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 1.1 mOhm @ 43A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Ta), 292A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMT80060DC is a single N-channel logic level Power MOSFET. It is a popular choice for power control applications in mediumpower switching circuits. It has a low ONstate resistance and a high current carrying capability. The device is fabricated on a Silicon-On-Insulator (SOI) technology.
The FDMT80060DC is specifically designed for high-speed switching applications. It has a fast switching characteristic and a low power loss which make it suitable for many high-speed applications. It is also suitable for use in low voltage logic level circuits, as the device can operate at voltages less than 5 volts.
The FDMT80060DC has two main operating modes. The first is a linear mode, where the drain current is directly proportional to the gate voltage. This is useful for applications such as voltage regulators. The second is a saturation mode, where the drain current is independent of the gate voltage. This is useful in many high-speed switching applications.
The FDMT80060DC is typically used for power control applications in systems that operate at medium power levels. Examples include DC-DC converters, power switches and motor controllers. The device can also be used in low voltage logic level circuits as well as in high-speed switching circuits. It is also suitable for use in automotive applications. The device is also capable of handling high surge currents and can operate in pulsed-load applications.
The FDMT80060DC has a high input impedance, which makes it ideal for switching in high-impedance circuits. The gate oxide layer is designed with a small gate capacitance, which reduces the switching losses and increases the speed of the device. The internal insulation also helps to reduce switching losses.
The device has an integrated Schottky diode that helps to protect the MOSFET from electro-static discharges. It also has an over-temperature protection feature that limits the power dissipation when the temperature rises beyond a certain level. The device also has an ESD protection feature that prevents the device from being damaged by electrostatic discharges.
The FDMT80060DC has a wide range of applications in power control circuits. It can be used to control the speed of motors, to control the voltage of DC-DC converters and to control the power of switching circuits. The device can be used for light load switching applications as well as for mediumload switching applications. The device can also be used for automotive applications, as the high input impedance makes it ideal for switching in high-impedance circuits.
The working principle of the FDMT80060DC is based on the transfer of electrons from the source to the drain. When the gate voltage is applied, it attracts the electrons of the source. This attracts the electrons of the drain as well, and the drain current flows through the device. The device has a high input impedance, so it can be used for switching in high-impedance circuits without the need for a pull-up resistor.
The FDMT80060DC is an excellent choice for a wide range of applications in medium power switching circuits, low voltage logic level circuits, and automotive applications. The device has a low ON-state resistance, a fast switching characteristic, and a high input impedance, making it ideal for many high-speed switching applications. The integrated Schottky diode and over-temperature protection features make it suitable for use in many demanding applications.
The specific data is subject to PDF, and the above content is for reference
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