FDMT80040DC Allicdata Electronics

FDMT80040DC Discrete Semiconductor Products

Allicdata Part #:

FDMT80040DCOSTR-ND

Manufacturer Part#:

FDMT80040DC

Price: $ 2.23
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 420A 8PQFN
More Detail: N-Channel 40V 420A (Tc) 156W (Tc) Surface Mount 8-...
DataSheet: FDMT80040DC datasheetFDMT80040DC Datasheet/PDF
Quantity: 1000
3000 +: $ 2.02353
Stock 1000Can Ship Immediately
$ 2.23
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (8x8)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 26110pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 0.56 mOhm @ 64A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDMT80040DC is a special-purpose MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for use in voltage-controlled switching applications. It is an N-channel MOSFET, meaning that it has an N-type semiconductor material on one side of the gate, which carries electrons when a voltage is applied. The FDMT80040DC is a single-channel MOSFET, allowing only one voltage-controlled switching application to be activated at any given time.

The FDMT80040DC is produced using a special manufacturing process, which is designed to allow for the construction of a device with extremely small dimensions. This process enables the FDMT80040DC to operate at very high frequencies, while also providing high levels of switching performance. The device is designed to be able to switch up to a maximum voltage of 40V, and can handle a maximum current of 800mA. This makes it ideal for switching applications that require high performance and/or very fast switching times.

The working principle of a MOSFET is relatively simple. When a voltage is applied to the gate of the device, an electric field is produced which attracts electrons to the surface of the N-type semiconductor material. This causes the device to become "inverted," meaning that the electrons that were previously attracted to the N-type material will now be repelled from the surface. This inversion of the electric field causes a change in the resistance of the device, allowing current to flow through it.

The FDMT80040DC is designed for use in a variety of applications, such as digital circuitry, power supplies, and motor drives. It can be used in circuits in which very high switching speeds are required, as well as circuits that are subject to high voltage surges. The device is also useful for applications in which low on-resistance is desirable, as its low resistance allows for efficient power transfer.

The FDMT80040DC is particularly useful in high-speed switching applications, as it is designed to operate at very high frequencies while still being very efficient. This makes it a great choice for applications such as video switches and efficient LED backlighting. It is also a great choice for applications that require high performance and that may be subject to large voltage surges.

In conclusion, the FDMT80040DC is a very versatile MOSFET device which is designed to operate at very high frequencies, while still providing excellent switching performance. It is ideal for applications that require precision switching performance and high performance at very high frequencies. In addition, the device\'s small size makes it an ideal choice for applications that require a very small footprint.

The specific data is subject to PDF, and the above content is for reference

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